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Journals >Journal of Semiconductors >Volume 43 >Issue 11 >Page 112302 > Article

Journal of Semiconductors
Vol. 43, Issue 11, 112302 (2022)

Ag-catalyzed GaSb nanowires for flexible near-infrared photodetectors

Zixu Sa¹, Fengjing Liu¹, Dong Liu¹, Mingxu Wang¹, Jie Zhang¹, Yanxue Yin¹, Zhiyong Pang^1、*, Xinming Zhuang¹, Peng Wang^2、**, and Zaixing Yang^1、***

Author Affiliations

¹School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

²College of Electronic and Information Engineering, Shandong University of Science and Technology, Qingdao 266590, China

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DOI: 10.1088/1674-4926/43/11/112302 Cite this Article

Zixu Sa, Fengjing Liu, Dong Liu, Mingxu Wang, Jie Zhang, Yanxue Yin, Zhiyong Pang, Xinming Zhuang, Peng Wang, Zaixing Yang. Ag-catalyzed GaSb nanowires for flexible near-infrared photodetectors[J]. Journal of Semiconductors, 2022, 43(11): 112302 Copy Citation Text

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Zixu Sa, Fengjing Liu, Dong Liu, Mingxu Wang, Jie Zhang, Yanxue Yin, Zhiyong Pang, Xinming Zhuang, Peng Wang, Zaixing Yang. Ag-catalyzed GaSb nanowires for flexible near-infrared photodetectors[J]. Journal of Semiconductors, 2022, 43(11): 112302

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