[1] Saxena D, Mokkapati S, Parkinson P. et al. Optically pumped room-temperature GaAs nanowire lasers[J]. Nature Photonics, 7, 963-968(2013). http://www.nature.com/nphoton/journal/v7/n12/abs/nphoton.2013.303.html
[2] Liu M H, Cui B F, He X et al. Study of high power semiconductor laser with low threshold current[J]. Chinese Journal of Lasers, 43, 0502001(2016).
[3] Xu Z J, Lin S S, Li X Q. et al. Monolayer MoS2/GaAs heterostructure self-driven photodetector with extremely high detectivity[J]. Nano Energy, 23, 89-96(2016). http://www.sciencedirect.com/science/article/pii/S2211285516300246
[4] Peytavit E, Arscott S, Lippens D. et al. Terahertz frequency difference from vertically integrated low-temperature-grown GaAs photodetector[J]. Applied Physics Letters, 81, 1174-1176(2002). http://scitation.aip.org/content/aip/journal/apl/81/7/10.1063/1.1499517
[5] Han H V, Lin C C, Tsai Y L. et al. A highly efficient hybrid GaAs solar cell based on colloidal-quantum-dot-sensitization[J]. Scientific Reports, 4, 5734(2014). http://pubmedcentralcanada.ca/pmcc/articles/PMC4102900/
[6] Aberg I, Vescovi G, Asoli D. et al. A GaAs nanowire array solar cell with 15.3% efficiency at 1 sun[J]. IEEE Journal of Photovoltaics, 6, 185-190(2016).
[7] Ma D Y, Chen N F, Tao Q L et al. Performance of space GaInP/(In)GaAs/Ge triple-junction solar cell containing Bragg reflector[J]. Acta Optica Sinica, 37, 1131001(2017).
[8] Zhou G L, Xu J M, Lu J et al. Irradiation effect of continuous-wave laser on triple-junction GaAs solar cells[J]. Laser & Optoelectronics Progress, 54, 111412(2017).
[9] Gunapala S D, Bandara S V, Liu J K. et al. 1024×1024 Format pixel co-located simultaneously readable dual-band QWIP focal plane[J]. Infrared Physics & Technology, 52, 395-398(2009). http://www.sciencedirect.com/science/article/pii/S1350449509000498
[10] Gunapala S D, Bandara S V, Liu J K. et al. 640/spl times/512 pixel long-wavelength infrared narrowband, multiband, and broadband QWIP focal plane arrays[J]. IEEE Transactions on Electron Devices, 50, 2353-2360(2003). http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1255596
[11] Djie H S, Ooi B S, Aimez V. Neutral ion-implantation-induced selective quantum-dot intermixing[J]. Applied Physics Letters, 87, 261102(2005). http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4818045
[12] Kalousek R, Bartošík M et al. Fabrication of nanostructures on Si (100) and GaAs (100) by local anodic oxidation[J]. Applied Surface Science, 253, 2373-2378(2006). http://www.sciencedirect.com/science/article/pii/S016943320600643X
[13] Deppe D G, Holonyak N. Jr. Atom diffusion and impurity-induced layer disordering in quantum well III-V semiconductor heterostructures[J]. Journal of Applied Physics, 64, R93-R113(1988). http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5083426
[14] Marsh J H, Bradshaw S A, Bryce A C. et al. Impurity induced disordering of GaInAs quantum wells with barriers of AlGaInAs or of GaInAsP[J]. Journal of Electronic Materials, 20, 973-978(1991). http://link.springer.com/article/10.1007/BF03030191
[15] Du S C, Fu L, Tan H H. et al. Investigations of impurity-free vacancy disordering in (Al)InGaAs(P)/InGaAs quantum wells[J]. Semiconductor Science and Technology, 25, 055014(2010). http://adsabs.harvard.edu/abs/2010sesct..25e5014d
[16] Zhao J, Feng Z C, Wang Y C. et al. Luminescent characteristics of InGaAsP/InP multiple quantum well structures by impurity-free vacancy disordering[J]. Surface and Coatings Technology, 200, 3245-3249(2006). http://journals.cambridge.org/article_S1946427400624326
[17] Sengupta D K, Horton T, Fang W. et al. Redshifting of a bound-to-continuum GaAs/AlGaAs quantum-well infrared photodetector response via laser annealing[J]. Applied Physics Letters, 70, 3573-3575(1997). http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4891386
[18] Xie K, Wie C R, Varriano J A. et al. Improvement of GaAs/AlGaAs quantum well laser diodes by rapid thermal annealing[J]. Journal of Electronic Materials, 23, 1-6(1994). http://link.springer.com/article/10.1007/BF02651259
[19] Li L H, Pan Z, Xu Y Q. et al. Effects of rapid thermal annealing and SiO2 encapsulation on GaNAs/GaAs single quantum wells grown by plasma-assisted molecular-beam epitaxy[J]. Applied Physics Letters, 78, 2488-2490(2001). http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4896355
[20] Ni H Q, Niu Z C, Xu X H. et al. High-indium-content InxGa1-xAs/GaAs quantum wells with emission wavelengths above 1.25 μm at room temperature[J]. Applied Physics Letters, 84, 5100-5102(2004). http://scitation.aip.org/content/aip/journal/apl/84/25/10.1063/1.1762985
[21] Levine B F. Quantum-well infrared photodetectors[J]. Journal of Applied Physics, 74, R1-R81(1993).
[22] Cheng X K, Huang B B, Xu X G et al. Interference of electron in GaAs/AlGaAs multi-quantum well structure[J]. Acta Ectronica Sinica, 29, 692-694(2001).
[23] Roch T, Schrenk W, Anders S. et al. X-ray investigation of interface broadening by rapid thermal processing[J]. The Society for Micro-electronics, 109-111(2004).
[24] Dawson P, Duggan G, Ralph H I. et al. Free excitons in room-temperature photoluminescence of GaAs-AlxGa1-xAs multiple quantum wells[J]. Physical Review B, 28, 7381-7383(1983).
[25] Harrison P. Quantum wells, wires and dots: theoretical and computational physics of semiconductor nanostructures[M]. 3rd ed. Chichester: John Wiley & Sons(2009).
[26] Levine B F, Bethea C G, Shen V O. et al. Tunable long-wavelength detectors using graded barrier quantum wells grown by electron beam source molecular beam epitaxy[J]. Applied Physics Letters, 57, 383-385(1990). http://scitation.aip.org/content/aip/journal/apl/57/4/10.1063/1.103699
[27] Willardson R K, Beer A C. Semiconductors and semimetals[M]. New York: Academic press(1977).
[28] Li H, Cheng X K, Zhou J M[J]. et al. Photoluminesecence of doped GaAs/ Al0.3Ga0.7As superlatticeVacuum Electronics, 2005, 17-19.
[29] Li L H, Pan Z, Zhang W. et al. Effects of rapid thermal annealing on the optical properties of GaNxAs1-x/GaAs single quantum well structure grown by molecular beam epitaxy[J]. Journal of Applied Physics, 87, 245-248(2000).
[30] Smith P E. Atomic diffusion and interface electronic structure of III-V heterojunctions and their dependence on epitaxial growth transitions and annealing[D]. Columbus: The Ohio State University(2007).
[31] Li N, Lu W, Li N et al. Influence on GaAs/AlGaAs quantum well infrared photodetector of proton implantation and rapid thermal annealing[J]. Journal of Infrared and Millimeter Waves, 19, 25-28(2000).
[32] Sousa M A, Esteves T C, Sedrine N B. et al. Influence of nitrogen implantation and thermal annealing on the optical properties of green emitting InGaN/GaN multiple quantum wells[J]. Scientific Reports, 5, 09703(2015). http://projects.itn.pt/KLorenz/FCT2015/26_26410_1_art_file_784597_np68xp.pdf
