Effect of Rapid Thermal Annealing on Structural and Luminescence Properties of GaAs/AlGaAs Quantum Wells

Min Zhi; Xuan Fang; Shouzhu Niu; Dan Fang; Jilong Tang; Dengkui Wang; Xinwei Wang; Xiaohua Wang; Zhipeng Wei

doi:10.3788/LOP55.051603

Journals >Laser & Optoelectronics Progress >Volume 55 >Issue 5 >Page 051603 > Article

Laser & Optoelectronics Progress
Vol. 55, Issue 5, 051603 (2018)

Effect of Rapid Thermal Annealing on Structural and Luminescence Properties of GaAs/AlGaAs Quantum Wells

Min Zhi, Xuan Fang^*;, Shouzhu Niu, Dan Fang, Jilong Tang, Dengkui Wang, Xinwei Wang, Xiaohua Wang, and Zhipeng Wei

Author Affiliations

State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, Jilin 130022, China

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DOI: 10.3788/LOP55.051603 Cite this Article Set citation alerts

Min Zhi, Xuan Fang, Shouzhu Niu, Dan Fang, Jilong Tang, Dengkui Wang, Xinwei Wang, Xiaohua Wang, Zhipeng Wei. Effect of Rapid Thermal Annealing on Structural and Luminescence Properties of GaAs/AlGaAs Quantum Wells[J]. Laser & Optoelectronics Progress, 2018, 55(5): 051603 Copy Citation Text

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