• Laser & Optoelectronics Progress
  • Vol. 55, Issue 5, 051603 (2018)
Min Zhi, Xuan Fang*; , Shouzhu Niu, Dan Fang, Jilong Tang, Dengkui Wang, Xinwei Wang, Xiaohua Wang, and Zhipeng Wei
Author Affiliations
  • State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, Jilin 130022, China
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    DOI: 10.3788/LOP55.051603 Cite this Article Set citation alerts
    Min Zhi, Xuan Fang, Shouzhu Niu, Dan Fang, Jilong Tang, Dengkui Wang, Xinwei Wang, Xiaohua Wang, Zhipeng Wei. Effect of Rapid Thermal Annealing on Structural and Luminescence Properties of GaAs/AlGaAs Quantum Wells[J]. Laser & Optoelectronics Progress, 2018, 55(5): 051603 Copy Citation Text show less
    Structural parameters of samples
    Fig. 1. Structural parameters of samples
    (a) XRD patterns of different samples; (b) FWHM and +1 diffraction peak intensity of samples under different annealing temperatures
    Fig. 2. (a) XRD patterns of different samples; (b) FWHM and +1 diffraction peak intensity of samples under different annealing temperatures
    PL scanning test results of different samples. (a) Luminous intensity; (b) FWHM
    Fig. 3. PL scanning test results of different samples. (a) Luminous intensity; (b) FWHM
    PL spectrum comparison between untreated sample and RTA treated samples at room temperature
    Fig. 4. PL spectrum comparison between untreated sample and RTA treated samples at room temperature
    (a) Normalized peak-differentiating and fitting diagram of untreated sample and RTA treated samples; (b) band splitting graph
    Fig. 5. (a) Normalized peak-differentiating and fitting diagram of untreated sample and RTA treated samples; (b) band splitting graph
    Min Zhi, Xuan Fang, Shouzhu Niu, Dan Fang, Jilong Tang, Dengkui Wang, Xinwei Wang, Xiaohua Wang, Zhipeng Wei. Effect of Rapid Thermal Annealing on Structural and Luminescence Properties of GaAs/AlGaAs Quantum Wells[J]. Laser & Optoelectronics Progress, 2018, 55(5): 051603
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