Fig. 1. (Color online) Schematic of the cross-section for electronic and nuclear stopping processes as a function of ion energy^[12].

Fig. 2. (Color online) Magnetic properties after introducing hole compensation by ion irradiation. The ion fluence was increased in linear steps. (a), (c), and (d) show the temperature dependent magnetization for different samples, while (b) shows the magnetic hysteresis for sample Mn6ann (GaMnAs) for various ion fluences. The temperature-dependent magnetization is measured at a small field of 20 Oe after cooling in field. One observes an increase in the coercive field H_C when T_C and the remanent magnetization decrease. The arrows indicate the increase of DPA from 0 to 2.88 × 10⁻³. In each panel, the black line is the result for the nonirradiated sample. This figure is drawn from Ref. [16].

Fig. 3. (Color online) (a) Curie temperature (T_C), (b) saturation magnetization (M_S) as well as (c) coercive field (H_C) for the magnetic easy axis at 5 K versus DPA for (Ga,Mn)As (squares), (In,Mn)As (circles) and (Ga,Mn)P (triangles)^[17].

Fig. 4. (Color online) (a) Oscillating part of the resistivity ∆ρ_xx at 1.9 K for B∥c as a function of the inverse magnetic field 1/B for different irradiation doses. (b) Temperature dependence of the oscillation amplitude with solid lines representing the fits obtained using the equation of Eq. (2). Different symbols correspond to the analysis of different Landau levels (i.e., peaks at different 1/B positions). To compare the temperature dependence of different peaks, the oscillation amplitudes have been normalized to the value of the fit for 1/B → 0. (c) Cyclotron masses m_c as function of the inverse oscillation period [∆(1/B)]^–1. (d) Dingle plots at T = 1.9 K and inset showing the mean free path l as a function of irradiation doseQ^[18].

Fig. 5. (Color online) Low-temperature variation of the London penetration depth Δλ(T) in a single crystal of Nb_xBi₂Se₃ for multiple values of cumulative irradiation dose vs reduced temperature squared (T/T_C)². The linear fits (red, black lines) indicate quadratic behavior. As the dose increases, the temperature dependence remains quadratic, indicative of point nodes in the superconducting gap. Data are offset vertically for clarity of presentation. The top axis shows the corresponding T/T_C values^[39].

Fig. 6. (Color online) DLTS spectra of 4H-SiC n-type epilayer irradiated with (a) fast neutrons, (b) 4.5 MeV electrons, (c) 670 keV protons, and (d) 9.6 MeV carbon ions. First temperature scan, rate window 4.1 s⁻¹ (neutron, proton and carbon irradiation) and 56 s⁻¹ (electrons)^[44].

Fig. 7. (Color online) DLTS spectra of n-base of the 4H-SiC PiN diode measured before (black thin) and after (short-dashed) irradiation with 800 keV protons to a fluence of 5 × 10⁹ cm^–2 and after annealing at 370 °C (red thick)^[59].

Fig. 8. (Color online) Reverse recovery of the 2 A/10 keV SiC PiN diode measured before (solid line) and after irradiation (dashed-dotted line) with 800 keV protons to a fluence of 1 × 10¹¹ cm^–1 and after subsequent 1 h annealing at 370 °C (dash line) ^[20].

Fig. 9. (Color online) Measured OCVD response of 4H-SiC PiN diodes irradiated with different fluences of 800 keV protons. The value of high-level lifetime τ_HL (extracted at t = 3 µs) for different irradiation fluences are shown in the inset^[59].

Fig. 10. (Color online) Majority carrier DLTS spectra of P⁺PN^–N⁺ diode measured after (a) He⁺ irradiation and (b) H⁺ and isochronal 40 min annealing at 220 and 350 °C, rate window 260 s^{–1 [69]}.

Fig. 11. (a) Current reverse recovery characteristics of diodes irradiated by 500 keV (3 × 10¹⁴ cm^–2) and 4 MeV (2 × 10¹³ cm^–2) electrons (solid thin) and H⁺/He²⁺ ions (fluence 5 × 10¹² / 5 × 10¹¹ cm^–2, thick solid/dashed); (b) current (solid) and voltage (dashed) reverse recovery characteristics of the unirradiated diode and diodes irradiated by 4 MeV (2 × 10¹³ cm^–2) electrons and H⁺ ions (fluence 5 × 10¹² cm^–2)^[73].

Fig. 12. The reverse I–V curves measured at 30 °C of the unirradiated and not annealed device (Untreated), the irradiated double Al electrode devices with He energy of 11 MeV and dose of 1 × 10¹⁰ cm⁻² (He irradiation), and the PtSi + Al electrode devices with He energy of 10 MeV and doses of 1 × 10¹² and 1 × 10¹³ cm⁻², both annealed at 700 °C for 20 min (Pt gettering)^[76].

Fig. 13. Trade-off between the ON-state voltage drop at 100 A and the turn-OFF losses measured at (a) V_DC = 500 V, J_F = 1 A/cm² and (b) J_F = 50 A/cm² for unirradiated and helium irradiated devices whose electrodes are PtSi and Al. The irradiation energies are 5.8 MeV (open squares) and 10 MeV (open circles) for the sample with PtSi anode and 7.1 MeV (solid squares) and 11 MeV (solid circles) for the sample with Al anode^[75].

Table 1. Parameters for proton irradiation induced deep levels in n-type SiC.

Table 2. Survey of deep level electron traps identified in proton and He irradiated silicon^{[69, 72]}.