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    Journals >Acta Optica Sinica >Volume 44 >Issue 9 >Page 0904001 > Article
    • Acta Optica Sinica
    • Vol. 44, Issue 9, 0904001 (2024)
    A P-I-N Structure Single-Photon Avalanche Diode Detector with Low Dark Count Rate
    Zheng Li1, Danlu Liu1, Jie Dong1, Dajing Bian1, and Yue Xu1,2,*
    Author Affiliations
  • 1College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, Jiangsu, China
  • 2National and Local Joint Engineering Laboratory of RF Integration & Micro-Assembly Technology, Nanjing 210023, Jiangsu, China
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    DOI: 10.3788/AOS231800 Cite this Article Set citation alerts
    Zheng Li, Danlu Liu, Jie Dong, Dajing Bian, Yue Xu. A P-I-N Structure Single-Photon Avalanche Diode Detector with Low Dark Count Rate[J]. Acta Optica Sinica, 2024, 44(9): 0904001 Copy Citation Text show less
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    Article index updated: Jun. 15, 2025
    The article is cited by 4 article(s) CLP online library. (Some content might be in Chinese.)
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    Zheng Li, Danlu Liu, Jie Dong, Dajing Bian, Yue Xu. A P-I-N Structure Single-Photon Avalanche Diode Detector with Low Dark Count Rate[J]. Acta Optica Sinica, 2024, 44(9): 0904001
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    Paper Information
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