A P-I-N Structure Single-Photon Avalanche Diode Detector with Low Dark Count Rate

Zheng Li; Danlu Liu; Jie Dong; Dajing Bian; Yue Xu

doi:10.3788/AOS231800

Journals >Acta Optica Sinica >Volume 44 >Issue 9 >Page 0904001 > Article

Acta Optica Sinica
Vol. 44, Issue 9, 0904001 (2024)

A P-I-N Structure Single-Photon Avalanche Diode Detector with Low Dark Count Rate

Zheng Li¹, Danlu Liu¹, Jie Dong¹, Dajing Bian¹, and Yue Xu^1,2,*

Author Affiliations

¹College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, Jiangsu, China

²National and Local Joint Engineering Laboratory of RF Integration & Micro-Assembly Technology, Nanjing 210023, Jiangsu, China

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DOI: 10.3788/AOS231800 Cite this Article Set citation alerts

Zheng Li, Danlu Liu, Jie Dong, Dajing Bian, Yue Xu. A P-I-N Structure Single-Photon Avalanche Diode Detector with Low Dark Count Rate[J]. Acta Optica Sinica, 2024, 44(9): 0904001 Copy Citation Text

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Fig. 1. Cross-sectional view of P-I-N SPAD

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Simulation results of SPAD. (a) I-V curves of P-I-N SPAD; (b) electric field distribution of P-I-N SPAD; (c) 2D electric field distribution (D3); (d) 2D electric field distribution (D2)

Fig. 2. Simulation results of SPAD. (a) I-V curves of P-I-N SPAD; (b) electric field distribution of P-I-N SPAD; (c) 2D electric field distribution (D₃); (d) 2D electric field distribution (D₂)

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Fig. 3. Device photos and test results. (a) Micrograph of the SPAD; (b) I-V DC characteristic curves

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Fig. 4. Test results of DCR and AP. (a) DCR versus excess voltage at different temperatures; (b) post-pulse histogram when D₃=5 μm

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Fig. 5. PDP as a function of photon wavelength

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Fig. 6. Comparison of proposed SPAD with the other state-of-the-art SPADs

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Method	Technology	Junction	AP /%	V_BD /V	Peak PDP /% @λ /nm	PDP /% @901 nm	DCR /（s^-1·μm^-2）@ V_EX /V
Gramuglia et al.^［2］	180 nm CMOS	P-I-N	0.12-3	22	55@480	4.6	0.2@6
Liu et al.^［3］	55 nm CMOS	P⁺/DNW	N/A	26.1	20.3@660	5.9	20@2
Sun et al.^［4］	55 nm BSI CMOS	P⁺/N well	N/A	20.5	25.2@640	12	0.36@2.5
Wu et al.^［5］	180 nm CMOS	N⁺/P well	4.5	30.8	26@520	3.2	4.03@10
Veerappan et al.^［6］	180 nm CMOS	P-I-N	0.08	<40	47	5	1.5@11
Vornicu et al.^［7］	110 nm CIS	PW/DNW	0.5	N/A	64@500	5.5	0.4@3
Gramuglia et al.^［8］	55 nm BCD	DPW/BNW	0.97	31.5	62@530	5.6	0.1-2.6@1-7
This work	180 nm BCD	P-I-N	1.2	56	41@600	6	0.56@5

Table 1. Key performance comparison of P-I-N SPADs

Zheng Li, Danlu Liu, Jie Dong, Dajing Bian, Yue Xu. A P-I-N Structure Single-Photon Avalanche Diode Detector with Low Dark Count Rate[J]. Acta Optica Sinica, 2024, 44(9): 0904001

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