Multisource magnetron sputtering technology was used to prepare Ga and Al co-doped zinc oxide (GAZO)/Ag/GAZO transparent conductive thin films on a glass substrate. Comparative experiments showed that sputtering Ag with oxygen can increase the optical transmittance of the thin films in the 600-800 nm spectral region. After further optimization, at an oxygen flow of 1.0 sccm, Ag films with a thickness of 12 nm obtained continuous structure, which improved the photoelectric properties of the GAZO/Ag/GAZO thin films. Subsequent annealing at 150 ℃ for 1 h under ambient pressure further improved the photoelectric and structural properties of GAZO/Ag/GAZO thin films. After annealing, the sheet resistance of the thin films is 8.99 Ω/sq, the average transmittance in the 380-780 nm visible region is 98.17%, and the figure of merit is as high as 2260 Ω^-1. The prepared GAZO/Ag/GAZO transparent conductive thin films show excellent photoelectric properties and are expected to replace indium tin oxide films in the field of optoelectronic devices.