• Laser & Optoelectronics Progress
  • Vol. 60, Issue 9, 0900002 (2023)
Wenzhen Zou1, Chu Zhang1, Hongmin Jiang1, Liguo Gao2, Meiqiang Fan1, and Tingli Ma1、*
Author Affiliations
  • 1College of Materials and Chemistry, China Jiliang University, Hangzhou 310018, Zhejiang, China
  • 2School of Chemical Engineering, Dalian University of Technology, Panjin 116086, Liaoning, China
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    DOI: 10.3788/LOP220620 Cite this Article Set citation alerts
    Wenzhen Zou, Chu Zhang, Hongmin Jiang, Liguo Gao, Meiqiang Fan, Tingli Ma. Application of Transition Metal Doping in Perovskite Photovoltaic Devices[J]. Laser & Optoelectronics Progress, 2023, 60(9): 0900002 Copy Citation Text show less

    Abstract

    Perovskite solar cells have been rapidly developed in recent years. As of 2022, solar cells based on perovskites have achieved a photoconversion efficiency of 25.7%, showing great potential in the field of photovoltaic devices. Despite their high conversion efficiency, the thermal and humidity stability of perovskite solar cells are still considered major barriers to their development. Metal ion doping has proven to be one of the most effective ways to improve the optoelectrical performance and stability of perovskite solar cells. Among the ions introduced, transition metals have been favored by researchers because of their unique properties such as multivalency. In this paper, the latest advancements of doped perovskite photovoltaic devices with transition metal ions are briefly reviewed, and the methods and strategies of doping against the electron transport layer, perovskite active layer, hole transport layer, and metal electrode layer are summarized. The law and mechanism of such methods used to optimize the structure, photoelectric performance, and stability of perovskite photovoltaic devices are discussed.
    Wenzhen Zou, Chu Zhang, Hongmin Jiang, Liguo Gao, Meiqiang Fan, Tingli Ma. Application of Transition Metal Doping in Perovskite Photovoltaic Devices[J]. Laser & Optoelectronics Progress, 2023, 60(9): 0900002
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