
- High Power Laser Science and Engineering
- Vol. 7, Issue 1, 010000e9 (2019)
Abstract
1 Introduction
In a high-power and high-energy laser system, the injected laser beam needs to be shaped for a special geometric outline and spatial intensity distribution[
Flexibility is in demand for high power laser beam shapers. Electrically or optically addressed LC on a silicon spatial light modulator (LCOS-SLM) can realize real-time adjustment for laser beam shaping[
In order to enlarge the aperture and improve the damage threshold and stability of the LC beam shaper, we adopted the photolithographic patterning technology based on a silicon-based LC light modulator to design a new type of binary mask as described in Refs [
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2 Working principle
High damage threshold laser beam shapers are based on the preparative technology of electrically addressed LC spatial light modulators. The inherent conductive metal oxide layers are replaced by commercial azobenzene-based photoalignment materials. Azobenzene-based photoalignment materials are spun to align LC molecule layers and patterned by noncontact photolithography, with a high damage threshold. An LCOS-SLM produces a low-energy linearly polarized blue-light shaping pattern, which is designed directly by using an error-diffusion algorithm and then projected on the azobenzene-based photoalignment layer of an LC binary mask. Afterward, the photoalignment layers absorb the energy of irradiated linearly polarized blue light in a given direction to keep the orientation of LC molecules, as shown in Figure
The LC binary mask is composed of a binary array of pixels, where the orientation of LC molecules is parallel or twisted nematic, depending on the alignment direction photopatterned on the two bounding pixel surfaces[
3 Experiment
3.1 Liquid crystal cell fabrication
The fabrication process of the LC beam shaper is shown in Figure
After the empty LC cell is prepared, we inject the nematic LC (HPC850600, from PhiChem, China, birefringence of 0.219 at 1053 nm) and dope 0.07 wt.% chiral agent (S811, from PhiChem, China) into it by capillary action in vacuum at room temperature. For a specific incident intensity distribution, photolithography is performed by using an electrically/optically addressed LCOS-SLM for 5 minutes at a blue-light power of 10 mW[
3.2 Photolithography system
The photolithography system, shown in Figure
4 Shaping ability test system
In order to test the shaping ability of the LC binary mask, we constructed a test system, as shown in Figure
5 Experimental results and discussion
Using the method above, the physical parabolic LC binary mask is manufactured, which is shown in Figure
As the laser damage threshold of electro-optical LC shaping devices depends mainly on the inherent conductive metal oxide, which is replaced by the azobenzene-based photoalignment layer, the layer laser damage threshold is tested by using a 1 Hz near-IR (1064 nm) laser. Azobenzene material is coated on two types of glass substrate (K9 and ultraclear float glass), and both are irradiated with a multiple-shot nanosecond laser (1 Hz, 1064 nm). Laser damage thresholds for N-on-1 testing the azobenzene-based photoalignment layer spun on different glass substrates are shown in Table
Substrate | Laser damage threshold@1064 nm, 10 ns, 1 Hz |
---|---|
K9 glass 1 | |
K9 glass 2 | |
Ultraclear float glass |
Table 1. Laser damage thresholds of the azobenzene-based photoalignment layers.
Material | Laser damage |
---|---|
threshold@1064 nm, 10 ns, 1 Hz | |
LC ( | |
Polyimide ( | |
Chemical anti-reflection film | |
Inorganic anti-reflection film | |
Glass substrate (K9) |
Table 2. Laser damage thresholds of the LC binary mask materials.
The laser beam shaping ability is the key parameter to judge the performance of the LC binary mask. The transmission of the LC binary mask is the parabolic function
In addition, we designed and tested the LC square soft edge diaphragm[
6 Conclusion
This work clearly demonstrates that an LC binary mask with an azobenzene-based photoalignment layer is suitable for high power laser beam shaping. Using the photoalignment layer, a high damage threshold, large-aperture (30 mm
References
[1] K. L. Marshall, O. Didovets, D. Saulnier. Proc. SPIE, 9182(2014).
[2] J. Xie, W. Fan, X.-C. Li, Z.-Q. Lin. Acta Opt. Sin., 28, 1959(2008).
[3] C. Dorrer. Opt. Lett., 34, 2330(2009).
[4] K. L. Marshall, S. K.-H. Wei, M. Vargas, K. Wegman, C. Dorrer, P. Leung, J. Boule, Z. Zhao, S. H. Chen. Proc. SPIE, 8114(2011).
[5] K. L. Marshall, C. Dorrer, M. Vargas, A. Gnolek, M. Statt, S.-H. Chen. Proc. SPIE, 8475(2012).
[6] K. L. Marshall, J. Gan, G. Mitchell, S. Papernov, A. L. Rigatti, A. W. Schmid, S. D. Jacobs. Proc. SPIE, 7050(2008).
[7] D.-J. Huang, W. Fan, X.-C. Li, Z.-Q. Lin. Chin. Opt. Lett., 11(2013).
[8] D.-J. Huang, W. Fan, X.-C. Li, Z.-Q. Lin. Chin. Opt. Lett., 10(2012).
[9] D.-J. Huang, W. Fan, X.-C. Li, Z.-Q. Lin. Proc. SPIE, 8556(2012).
[10] D.-J. Huang, W. Fan, H. Chen, G. Xia, L.-L. Pei, X.-C. Li, Z.-Q. Lin. Proc. SPIE, 10457(2017).
[11] K. L. Marshall, D. Saulnier, H. Xianyu, S. Serak, N. Tabiryan. Proc. SPIE, 8828(2013).
[12] K. L. Marshall, E. R. Sekera, K. Xiao. Proc. SPIE, 9565(2015).
[13] Y.-F. Ma, Z.-W. Fan, J.-S. Qiu, C.-Y. Feng, T.-Z. Zhao, W.-R. Lin. Chin. Opt. Lett., 8, 134(2010).
[15] J. Heebner, M. Borden, P. Miller, C. Stolz, T. Suratwala, P. Wegner, M. Hermann, M. Henesian, C. Haynam, S. Hunter, K. Christensen, N. Wong, L. Seppala, G. Brunton, E. Tse, A. Awwal, M. Franks, E. Marley, K. Williams, M. Scanlan, T. Budge, M. Monticelli, D. Walmer, S. Dixit, C. Widmayer, J. Wolfe, J. Bude, K. McCarty, J. DiNicola. Proc. SPIE, 7842(2010).
[16] C. Dorrer, J. D. Zuegel. J. Opt. Soc. Am. B, 24, 1268(2007).
[17] P. Rambo, J. Schwarz, M. Kimmel, J. L. Porter. High Power Laser Sci. Eng., 4, e32(2016).
[18] C. Dorrer. Appl. Opt., 52, 3368(2013).
[19] C. Dorrer, J. Hassett. Appl. Opt., 56, 806(2017).
[20] Z.-Q. Lin, Y.-X. Zheng, W.-Y. Yu. Acta Phys. Sin., 28, 268(1979).
[21] P. Chen, W. Ji, B.-Y. Wei, W. Hu, V. Chigrinov, Y.-Q. Lu. Appl. Phys. Lett., 107(2015).
[22] P. Chen, S.-J. Ge, W. Duan, B.-Y. Wei, G.-X. Cui, W. Hu, Y.-Q. Lu. ACS Photon., 4, 1333(2017).
[23] P. Chen, L.-L. Ma, W. Duan, J. Chen, S.-J. Ge, Z.-H. Zhu, M.-J. Tang, R. Xu, W. Gao, T. Li, W. Hu, Y.-Q. Lu. Adv. Mater., 30(2018).

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