Optimizing an interleaved p-n junction to reduce energy dissipation in silicon slow-light modulators

Marco Passoni; Dario Gerace; Liam O’Faolain; Lucio Claudio Andreani

doi:10.1364/PRJ.382620

Journals >Photonics Research >Volume 8 >Issue 4 >Page 457 > Article

Photonics Research
Vol. 8, Issue 4, 457 (2020)

Optimizing an interleaved p-n junction to reduce energy dissipation in silicon slow-light modulators

Marco Passoni¹, Dario Gerace¹, Liam O’Faolain^2、3, and Lucio Claudio Andreani^1、4、*

Author Affiliations

¹Department of Physics, University of Pavia, 27100 Pavia, Italy

²Centre for Advanced Photonics and Process Analysis, Cork Institute of Technology, Cork, Ireland

³Tyndall National Institute, Cork, Ireland

⁴Institute for Photonics and Nanotechnologies (IFN)-CNR, 20133 Milano, Italy

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DOI: 10.1364/PRJ.382620 Cite this Article Set citation alerts

Marco Passoni, Dario Gerace, Liam O’Faolain, Lucio Claudio Andreani. Optimizing an interleaved p-n junction to reduce energy dissipation in silicon slow-light modulators[J]. Photonics Research, 2020, 8(4): 457 Copy Citation Text

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