• Journal of Infrared and Millimeter Waves
  • Vol. 43, Issue 1, 23 (2024)
Jia-Mu LIN*, Song-Min ZHOU, Xi WANG, Zhi-Kai GAN, Chun LIN, and Rui-Jun DING
Author Affiliations
  • Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China
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    DOI: 10.11972/j.issn.1001-9014.2024.01.004 Cite this Article
    Jia-Mu LIN, Song-Min ZHOU, Xi WANG, Zhi-Kai GAN, Chun LIN, Rui-Jun DING. Study on HgCdTe detectors with high operating temperature by junction formation simulator[J]. Journal of Infrared and Millimeter Waves, 2024, 43(1): 23 Copy Citation Text show less
    The diagram of n+-n--p structure
    Fig. 1. The diagram of n+-n--p structure
    Junction drive-in results under different temperature
    Fig. 2. Junction drive-in results under different temperature
    Simulated dark current under different temperature and light current of HOT structure device
    Fig. 3. Simulated dark current under different temperature and light current of HOT structure device
    The diagram of passivation structure with composition gradient
    Fig. 4. The diagram of passivation structure with composition gradient
    Performance histogram of MWIR n-on-p HgCdTe focal plane arrays at 80K (a) histogram of response,(b) histogram of NETD
    Fig. 5. Performance histogram of MWIR n-on-p HgCdTe focal plane arrays at 80K (a) histogram of response,(b) histogram of NETD
    response and noise result of the device at different operating temperature (a) Response and photoelectrons calculation,(b) Noise
    Fig. 6. response and noise result of the device at different operating temperature (a) Response and photoelectrons calculation,(b) Noise
    Dark current graph of the device at different operating temperature
    Fig. 7. Dark current graph of the device at different operating temperature
    NETD graph of the device at different operating temperature
    Fig. 8. NETD graph of the device at different operating temperature
    Operability graph of the device at different operating temperature
    Fig. 9. Operability graph of the device at different operating temperature
    Image picture of 320×256 MWIR focal plane arrays at different operating temperature
    Fig. 10. Image picture of 320×256 MWIR focal plane arrays at different operating temperature
    Jia-Mu LIN, Song-Min ZHOU, Xi WANG, Zhi-Kai GAN, Chun LIN, Rui-Jun DING. Study on HgCdTe detectors with high operating temperature by junction formation simulator[J]. Journal of Infrared and Millimeter Waves, 2024, 43(1): 23
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