Research and Development on Laser Frequency Stabilization Based on Spectral Hole-Burning Effect

Lin Han; Yige Lin; Jing Yang; Yingjie Lan; Ye Li; Xiaojun Wang; Yong Bo; Qinjun Peng

doi:10.3788/LOP56.110003

Journals >Laser & Optoelectronics Progress >Volume 56 >Issue 11 >Page 110003 > Article

Laser & Optoelectronics Progress
Vol. 56, Issue 11, 110003 (2019)

Research and Development on Laser Frequency Stabilization Based on Spectral Hole-Burning Effect

Lin Han^1、*, Yige Lin², Jing Yang¹, Yingjie Lan¹, Ye Li², Xiaojun Wang¹, Yong Bo¹, and Qinjun Peng¹

Author Affiliations

¹ Research Center of Laser Physics and Technology, Key Laboratory of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China

² Time and Frequency Division, National Institute of Metrology, Beijing 100029, China

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DOI: 10.3788/LOP56.110003 Cite this Article Set citation alerts

Lin Han, Yige Lin, Jing Yang, Yingjie Lan, Ye Li, Xiaojun Wang, Yong Bo, Qinjun Peng. Research and Development on Laser Frequency Stabilization Based on Spectral Hole-Burning Effect[J]. Laser & Optoelectronics Progress, 2019, 56(11): 110003 Copy Citation Text

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Fig. 1. Diagram of spectral hole-burning

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Diagram of interaction between incident laser and spectral hole-burning. (a) Laser frequency equal to central frequency of spectral hole-burning; (b) laser frequency higher than central frequency of spectral hole-burning; (c) laser frequency lower than central frequency of spectral hole-burning

Fig. 2. Diagram of interaction between incident laser and spectral hole-burning. (a) Laser frequency equal to central frequency of spectral hole-burning; (b) laser frequency higher than central frequency of spectral hole-burning; (c) laser frequency lower than central frequency of spectral hole-burning

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Fig. 3. Energy-level structure of ions for spectral hole-burning

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Fig. 4. Experimental setup of laser frequency stabilization based on spectral hole-burning effect

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Fig. 5. Experimental setup of laser frequency stabilization based on spectral hole-burning effect with pre-stabilization on F-P cavity

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Ion	Lockedwavelength /nm	Energy-level-transition	Hostmaterial
Eu³⁺	580	⁷F₀→⁵D₀	Y₂SiO₅
Tm³⁺	793	³H₆→³H₄	YAG、CaF₂
Er³⁺	1550	⁴I_15/2→⁴I_13/2	Y₂SiO₅
Pr³⁺	606	³H₄→¹D₂	Y₂SiO₅

Table 1. Materials for laser frequency stabilization based on spectral hole-burning effect in cryogenic rare-earth-ion-doped crystals

Year	Team	Laser	Stabilizationwavelength /nm	Spectral Hole-burningmaterial	Result	Method
1999	Montana StateUniversity, USA	External cavitydiode laser	798	Tm³⁺∶CaF₂	Allandeviation of 780±120 Hzfor 20-50 ms integration time	Ref. [19]
2000	Montana StateUniversity, USA	External cavitydiode lasers	793	Tm³⁺∶Y₃Al₅O₁₂	Stabilization to 20 Hz on10 ms time scale	Ref. [20]
2001	Montana StateUniversity, USA	Diode lasers	1536	Er³⁺∶Y₂SiO₅	Allandeviation of 500 Hzfor 2 ms integration time drift of7 kHz/min over several minutes	Ref. [21],[22], [23]
2002	Montana StateUniversity, USA	Diode lasers	1537	Er³⁺∶KTP	200 Hz at 1.5 μm and independentto 20 Hz at 793 nm over10 ms integration time	Ref. [24]
2003	Montana StateUniversity, USA	Diode lasers	1523	Er³⁺∶D₂ ∶CaF₂	Frequency stability of 2 kHzto 680 Hz over 20 ms to 500 sintegration time	Ref. [25]
2007	Lund Institute ofTechnology, Sweden	Dye lasers	606	Pr³⁺∶Y₂SiO₅	Frequency stability of1 kHz over 10 μs time scaletogether with long-term frequencydrift below 1 kHz/s	Ref. [17]
2007	Montana StateUniversity, USA	Single-frequencydiode lasers	1530.4	Er³⁺∶LiYF₄	Allan deviation of 1.5 kHzover 0.05-50 s integration times,with laser frequency drift reducedto less than 1.4 kHz/min	Ref. [26]
2011	National Instituteof Standards andTechnology, USA	Dye lasers	580	Eu³⁺∶Y₂SiO₅	Allan deviation of≤6×10^-16 for 2 s≤t≤8 sintegration time	Ref. [14]
2013	National Instituteof Standardsand Technology(NIST), USA	Dye lasers	580	Eu³⁺∶Y₂SiO₅	Short-term frequencystability of 7×10^-16τ^-1/2that averages down to@204 s integration time	Ref. [28]
2015	National Instituteof Standards andTechnology(NIST), USA	Dye lasers	580	Eu³⁺∶Y₂SiO₅	Fractional frequencyinstability of 1×10^-15τ^-1/2that averages to @73 sintegration time	Ref. [39]
2017	PSL ResearchUniversity,France	External cavity diodelasers + frequencydoubling in PPLN	580	Eu³⁺∶Y₂SiO₅	Fractional frequencystability of 2×10^-14 from1 to 100 s integration time	Ref. [40]

Table 2. Research progress on laser frequency stabilization based on spectral hole-burning effect in cryogenic rare- earth-ion-doped crystals

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