• Acta Optica Sinica
  • Vol. 43, Issue 23, 2313001 (2023)
Rongqing Yi, Yang Wang, Zhixiang Cao, and Xiangliang Jin*
Author Affiliations
  • School of Physics and Electronics, Hunan Normal University, Changsha 410081, Hunan , China
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    DOI: 10.3788/AOS231156 Cite this Article Set citation alerts
    Rongqing Yi, Yang Wang, Zhixiang Cao, Xiangliang Jin. Design and Verification of Single-Photon Avalanche Diode with High Gain at Low Overbias Voltage[J]. Acta Optica Sinica, 2023, 43(23): 2313001 Copy Citation Text show less
    Three-dimensional cross-sectional schematic of SPAD
    Fig. 1. Three-dimensional cross-sectional schematic of SPAD
    Simulated I-V curve of SPAD
    Fig. 2. Simulated I-V curve of SPAD
    Device simulation results of TCAD. (a) Electric field distribution; (b) impact ionization distribution; (c) current density distribution; (d) photon absorption rate
    Fig. 3. Device simulation results of TCAD. (a) Electric field distribution; (b) impact ionization distribution; (c) current density distribution; (d) photon absorption rate
    Light generation and absorption rate distribution of SPAD device
    Fig. 4. Light generation and absorption rate distribution of SPAD device
    Microscope and layout images of device. (a) Microscope image; (b) layout image
    Fig. 5. Microscope and layout images of device. (a) Microscope image; (b) layout image
    Test platform of SPAD. (a) Schematic of passive quenching circuit; (b) test platform of passive quenching circuit
    Fig. 6. Test platform of SPAD. (a) Schematic of passive quenching circuit; (b) test platform of passive quenching circuit
    I-V characteristic test curve of SPAD
    Fig. 7. I-V characteristic test curve of SPAD
    PDP test results of SPAD device
    Fig. 8. PDP test results of SPAD device
    Dark count rate (DCR) of SPAD device
    Fig. 9. Dark count rate (DCR) of SPAD device
    Schematic diagram of mixed simulation model
    Fig. 10. Schematic diagram of mixed simulation model
    Pulse curve simulated by SPAD model
    Fig. 11. Pulse curve simulated by SPAD model
    Measured curve and model simulation curve of SPAD
    Fig. 12. Measured curve and model simulation curve of SPAD
    DeviceProcess /μmPDP /%Temperature /℃DCR /(Hz·μm-2
    SPAD10.1837.5(1.0 V/500 nm)251.23
    SPAD20.1323.0(2.0 V/610 nm)1.13
    SPAD30.1334.0(1.7 V/450 nm)25640.00
    SPAD40.1824.0(1.0 V/480 nm)250.86
    SPAD50.1813.0(1.0 V/480 nm)251.50
    Proposed SPAD0.1842.7(1.0 V/560 nm)2211.50
    Table 1. Comparison of PDP test results of reported SPADs and proposed SPAD
    Rongqing Yi, Yang Wang, Zhixiang Cao, Xiangliang Jin. Design and Verification of Single-Photon Avalanche Diode with High Gain at Low Overbias Voltage[J]. Acta Optica Sinica, 2023, 43(23): 2313001
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