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Journals >Journal of Infrared and Millimeter Waves >Volume 40 >Issue 6 >Page 791 > Article

Journal of Infrared and Millimeter Waves
Vol. 40, Issue 6, 791 (2021)

Effect of lattice mismatch on the temperature dependence of Raman scattering in GaAsSb / InP heterostructures

Yuan-Yuan CHU¹, Ying-Mei LIU¹, Sheng-Juan LI¹, Zhi-Cheng XU³, Jian-Xin CHEN³, and Xing-Jun WANG^2、*

Author Affiliations

¹School of Materials Science and Engineering，University of Shanghai for Science and Technology，Shanghai 200093，China

²State Key Laboratory of Infrared Physics ，Shanghai Institute of Technical Physics，Chinese Academy of Sciences，Shanghai 200083，China

³Key Laboratory of Infrared Imaging Materials and Devices，Shanghai Institute of Technical Physics，Chinese Academy of Sciences，Shanghai 200083，China

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DOI: 10.11972/j.issn.1001-9014.2021.06.013 Cite this Article

Yuan-Yuan CHU, Ying-Mei LIU, Sheng-Juan LI, Zhi-Cheng XU, Jian-Xin CHEN, Xing-Jun WANG. Effect of lattice mismatch on the temperature dependence of Raman scattering in GaAsSb / InP heterostructures[J]. Journal of Infrared and Millimeter Waves, 2021, 40(6): 791 Copy Citation Text

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References

[1] D L Dheeraj, G Patriarche, L Largeau et al. Zinc blende GaAsSb nanowires grown by molecular beam epitaxy. Nanotechnology, 19, 275605(2008).

[2] J Huh, D C Kim, A M Munshi et al. Low frequency noise in single GaAsSb nanowires with self-induced compositional gradients. Nanotechnology, 27, 385703(2016).

[3] L Ma, X Zhang, H Li et al. Bandgap-engineered GaAsSb alloy nanowires for near-infrared photodetection at 1.31μm. Semiconductor Science and Technology, 30, 6-12(2015).

[4] D Ren, D L Dheeraj, C Jin et al. New insights into the origins of Sb-induced effects on self-catalyzed GaAsSb nanowire arrays. Nano Letters, 16, 1201-1209(2016).

[5] W Y Qiu, X J Wang, P P Chen et al. Optical spin polarization and Hanle effect in GaAsSb: Temperature dependence. Applied Physics Letters, 105, 082104(2014).

[6] E Ahmad, M R Karim, S B Hafiz et al. A two-step growth pathway for high Sb incorporation in GaAsSb nanowires in the telecommunication wavelength range. Nature, 7, 10111(2017).

[7] C Y Chou, A Torfi, W I Wang et al. Improvement of GaAsSb alloys on InP grown by molecular beam epitaxy with substrate tilting. Journal of Applied Physics, 114, 17-22(2013).

[8] Z Li, X Yuan, L Fu et al. Room temperature GaAsSb single nanowire infrared photodetectors. Nanotechnology, 26, 445202(2015).

[9] R M Cohen, M J Cherng, R E Benner et al. Raman and photoluminescence spectra of GaAs1-xSbx. Journal of Applied Physics, 57, 4817-4819(1985).

[10] S Das, A S Sharma, S Bakshi et al. Photoluminescence investigation of the properties of GaAsSb in the dilute Sb regime. Journal of Materials Science: Materials in Electronics, 31, 6255-6262(2020).

[11] X Gao, F Zhao, X Fang et al. Optical characteristics of GaAsSb alloy after rapid thermal annealing. Semiconductor Science and Technology, 32, 114007(2017).

[12] P Verma, S C Abbi, K P Jain et al. Raman-scattering probe of anharmonic effects in GaAs. Phys Rev B Condens Matter, 51, 16660-16667(1995).

[13] C Ramkumar, K P Jain, S C Abbi et al. Raman-scattering probe of anharmonic effects due to temperature and compositional disorder in III-V binary and ternary alloy semiconductors. Physical Review B, 53, 13672-13681(1996).

[14] D Linde vonder, J Kuhl, H Klingenberg et al. Raman Scattering from Nonequilibrium LO Phonons with Picosecond Resolution. Physical Review Letters, 44, 1505-1508(1980).

[15] J A Kash, R G Ulbrich, J C Tsang et al. Quantitative measurements of intervalley and carrier-carrier scattering in GaAs with hot luminescence. Solid State Electronics, 32, 1277-1281(1989).

[16] Y M Liu, Y Y Chu, Y Lu et al. Lattice-optimized GaAsSb/InP heterojunction toward both efficient carier confinement and thermal dissipation. Physica Status Solidi-Rapid Research Letters, 14, 2000108(2020).

[17] S P Bremner, K Ghosh, L Nataraj et al. Influence of Sb/As soak times on the structural and optical properties of GaAsSb/GaAs interfaces. Thin Solid Films, 519, 64-68(2010).

[18] P Deshmukh, M Sharma, S Nalamati et al. Molecular beam epitaxial growth of high-quality Ga-catalyzed GaAs1–xSbx (x>0.8) nanowires on Si(111) with photoluminescence emission reaching 1.7 μm. Semiconductor Science and Technology, 33, 125007(2018).

[19] S V Morozov, D I Kryzhkov, V I Gavrilenko et al. Determination of the heterojunction type in structures with GaAsSb/GaAs quantum wells with various antimony fractions by optical methods. Semiconductors, 46, 1376-1380(2012).

[20] C P Dietrich, M Lange, G Benndorf et al. Competing exciton localization effects due to disorder and shallow defects in semiconductor alloys. New Journal of Physics, 12, 003030(2010).

[21] M Balkanski, R F Wallis, E Haro. Anharmonic effects in light scattering due to optical phonons in silicon. Physical Review B, 28, 1928-1934(1983).

[22] M Mączka, M L Sanjuán, A F Fuentes et al. Temperature-dependent Raman study of the spin-liquid pyrochlore Tb2Ti2O7. Physical Review B, 78, 134420(2008).

[23] J V Silveira, L L Vieira, J M Filho et al. Temperature-dependent Raman spectroscopy study in MoO3 nanoribbons. Journal of Raman Spectroscopy, 43, 1407-1412(2012).

[24] A V Stanchik, M S Tivanov, I I Tyukhov et al. Temperature dependence of Raman scattering in the Cu2ZnSnSe4 thin films on a Ta foil substrate. Solar Energy, 201, 480-488(2020).

[25] L X Hung, P T Nga, N N Dat et al. Temperature Dependence of Raman and photoluminescence spectra of ternary alloyed CdSe0.3Te0.7 quantum dots. Journal of Electronic Materials, 49, 2568-2577(2020).

[26] Y Q Chen, B Peng, B Wang. Raman spectra and temperature-dependent raman scattering of silicon nanowires. The Journal of Physical Chemistry C, 111, 5855-5858(2007).

[27] M Prema Rani, R Saravanan. Influence of silicon and boron doping on the thermal conductivity of n-gaas single crystals. Materials Science Forum, 671, 153-163.

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Yuan-Yuan CHU, Ying-Mei LIU, Sheng-Juan LI, Zhi-Cheng XU, Jian-Xin CHEN, Xing-Jun WANG. Effect of lattice mismatch on the temperature dependence of Raman scattering in GaAsSb / InP heterostructures[J]. Journal of Infrared and Millimeter Waves, 2021, 40(6): 791

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