Effect of lattice mismatch on the temperature dependence of Raman scattering in GaAsSb / InP heterostructures

Yuan-Yuan CHU; Ying-Mei LIU; Sheng-Juan LI; Zhi-Cheng XU; Jian-Xin CHEN; Xing-Jun WANG

doi:10.11972/j.issn.1001-9014.2021.06.013

Journals >Journal of Infrared and Millimeter Waves >Volume 40 >Issue 6 >Page 791 > Article

Journal of Infrared and Millimeter Waves
Vol. 40, Issue 6, 791 (2021)

Effect of lattice mismatch on the temperature dependence of Raman scattering in GaAsSb / InP heterostructures

Yuan-Yuan CHU¹, Ying-Mei LIU¹, Sheng-Juan LI¹, Zhi-Cheng XU³, Jian-Xin CHEN³, and Xing-Jun WANG^2、*

Author Affiliations

¹School of Materials Science and Engineering，University of Shanghai for Science and Technology，Shanghai 200093，China

²State Key Laboratory of Infrared Physics ，Shanghai Institute of Technical Physics，Chinese Academy of Sciences，Shanghai 200083，China

³Key Laboratory of Infrared Imaging Materials and Devices，Shanghai Institute of Technical Physics，Chinese Academy of Sciences，Shanghai 200083，China

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DOI: 10.11972/j.issn.1001-9014.2021.06.013 Cite this Article

Yuan-Yuan CHU, Ying-Mei LIU, Sheng-Juan LI, Zhi-Cheng XU, Jian-Xin CHEN, Xing-Jun WANG. Effect of lattice mismatch on the temperature dependence of Raman scattering in GaAsSb / InP heterostructures[J]. Journal of Infrared and Millimeter Waves, 2021, 40(6): 791 Copy Citation Text

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$（a）BF-TEM of cross section of GaAs1-xSbx/InP（x=56.2%）heterojunction，（b）the corresponding selected area electron diffraction （SAED）$

Fig. 1. （a）BF-TEM of cross section of GaAs_1-xSb_x/InP（x=56.2%）heterojunction，（b）the corresponding selected area electron diffraction （SAED）

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（a）The photoluminescence spectra of the three samples S1（Sb=37.9%），S2（Sb=47.7%）and S3（Sb=56.2%）at 13 K with a power of 2 mW，（b）the compositional dependence trend diagram of PL spectra 's half-peak width and intensity

Fig. 2. （a）The photoluminescence spectra of the three samples S1（Sb=37.9%），S2（Sb=47.7%）and S3（Sb=56.2%）at 13 K with a power of 2 mW，（b）the compositional dependence trend diagram of PL spectra 's half-peak width and intensity

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Fig. 3. Temperature-dependent Raman spectra of GaAs_1-_xSb_x /InP heterojunction samples with different Sb components at low power （a）Sample S1（Sb=37.9%），（b）sample S2（Sb=47.7%），（c）sample S3（Sb=56.2%）（dashed arrow is the trend of peak displacement）

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Fig. 4. Temperature dependent Raman peak variation trend of GaAs_1-xSb_x epitaxial layer with different Sb components （a）Sample S1（Sb=37.9%），（b）sample S2（Sb=47.7%），（c）sample S3（Sb=56.2%）

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Fig. 5. （a）Raman fitting spectra of GaAsSb epitaxial layer with different Sb components at T=80 K，（b）compositional dependence trend of life change at temperatures T=80 K and T=300 K

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Sb/ （%）	$ω_{0}$ /cm^-1	A/cm^-1	B/cm^-1
37.9	277.5 $\pm 2.0$	2.13 $\pm$ 3.14	-2.13 $\pm$ 1.13
47.7	276.3 $\pm$ 1.1	0.08 $\pm$ 1.64	-1.35 $\pm$ 0.59
56.2	272.2 $\pm$ 1.1	4.82 $\pm$ 1.86	-2.90 $\pm$ 0.68

Table 1. Four-phonon model fitting parameters

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	Temperature/K	37.9/（%）	47.7/（%）	56.2/（%）
Lifetime/ps	80	2.31	2.45	1.56
Lifetime/ps	300	1.86	1.96	1.37
$Γ_{a} / Γ_{b}$	300	1.26	1.31	1.48

Table 2. Lifetime and symmetry of GaAsSb materials in different components

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