Honggang Ye, Zhicheng Su, Fei Tang, Yitian Bao, Xiangzhou Lao, Guangde Chen, Jian Wang, Shijie Xu. Probing defects in ZnO by persistent phosphorescence[J]. Opto-Electronic Advances, 2018, 1(6): 180011-1

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- Opto-Electronic Advances
- Vol. 1, Issue 6, 180011-1 (2018)

Fig. 1. (Colour on-line) PL spectra of the ZnO bulk crystal at 10 K.(a ) Full-range spectrum under the excitation of a 325 nm He-Cd laser. The inset reveals the detailed components of the sharp UV peak, including the principal lines of free exciton (FX), donor-bound exciton (DX) and two-electron satellites (TES), as well as their longitudinal optical (LO) phonon sidebands. (b ) Defects induced visible emissions of the sample for the excitation wavelengths of 325 nm, 385 nm, and 450 nm.

Fig. 2. (a, b ) (Colour on-line) Decaying traces of the visible luminescence of the sample at different temperatures after ceasing the 385 nm excitation. (c, d ) show the recorded time-resolved phosphorescence images at 50 and 150 K, respectively.

Fig. 3. (Colour on-line) Variable-temperature PL spectra of the sample under the continuous excitation of 450 nm laser.

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