• Opto-Electronic Advances
  • Vol. 1, Issue 6, 180011-1 (2018)
Honggang Ye1、2, Zhicheng Su1, Fei Tang1, Yitian Bao1, Xiangzhou Lao1, Guangde Chen2, Jian Wang1, and Shijie Xu1、*
Author Affiliations
  • 1Department of Physics, and Shenzhen Institute of Research and Innovation (HKU-SIRI), The University of Hong Kong, Pokfulam Road, Hong Kong, China
  • 2Department of Applied Physics, Xi'an Jiaotong University, Xi'an 710049, China
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    DOI: 10.29026/oea.2018.180011 Cite this Article
    Honggang Ye, Zhicheng Su, Fei Tang, Yitian Bao, Xiangzhou Lao, Guangde Chen, Jian Wang, Shijie Xu. Probing defects in ZnO by persistent phosphorescence[J]. Opto-Electronic Advances, 2018, 1(6): 180011-1 Copy Citation Text show less

    Abstract

    Native point defects in ZnO are so complicated that most of them are still debating issues, although they have been studied for decades. In this paper, we experimentally reveal two sub-components usually hidden in the low energy tail of the main broad green luminescence band peaking at 547 nm (~2.267 eV) in intentionally undoped ZnO single crystal by selecting the below-band-gap (BBG) optical excitations (e.g. light wavelengths of 385 nm and 450 nm). Moreover, both sub-components are manifested as long persistent phosphorescence once the BBG excitations are removed. With the aid of a newly developed model, the energy depths of two electron traps involved within the long lived orange luminescence are determined to be 44 meV and 300 meV, respectively. The candidates of these two electron traps are argued to be most likely hydrogen and zinc interstitials in ZnO.
    $ I(t) \propto \left\{ {1 + \frac{M}{{{{[1 - F{\rm{exp}}( - \gamma t)]}^2}}}} \right\}\exp ( - \gamma t) $ (1)

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    $ \begin{array}{l} {\rm{Fe}}_{{\rm{Zn}}}^{2 + } + h{v_{{\rm{indigo}}}} \to {\rm{Fe}}_{{\rm{Zn}}}^{3 + } + {\rm{e, }}\\ {\rm{e}} + {{\rm{H}}^{1 + }} \to {\rm{H}} + h{v_{{\rm{phonon}}}}, \\ {\rm{H}} + {\rm{Fe}}_{{\rm{Zn}}}^{3 + } + {\rm{h}} \to {{\rm{H}}^{1 - }} + {\rm{Fe}}_{{\rm{Zn}}}^{3 + } + h{v_{{\rm{phonon}}}}, \\ {\rm{Fe}}_{{\rm{Zn}}}^{3 + } \to {\rm{Fe}}_{{\rm{Zn}}}^{3 + } + h{v_{{\rm{red}}}} + h{v_{{\rm{phonon}}}}. \end{array} $ (2)

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    Honggang Ye, Zhicheng Su, Fei Tang, Yitian Bao, Xiangzhou Lao, Guangde Chen, Jian Wang, Shijie Xu. Probing defects in ZnO by persistent phosphorescence[J]. Opto-Electronic Advances, 2018, 1(6): 180011-1
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