• Journal of Semiconductors
  • Vol. 43, Issue 10, 102301 (2022)
Tingting He1、2, Xiaohong Yang1、2、*, Yongsheng Tang1、2, Rui Wang1、2, and Yijun Liu1、2
Author Affiliations
  • 1State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
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    DOI: 10.1088/1674-4926/43/10/102301 Cite this Article
    Tingting He, Xiaohong Yang, Yongsheng Tang, Rui Wang, Yijun Liu. High photon detection efficiency InGaAs/InP single photon avalanche diode at 250 K[J]. Journal of Semiconductors, 2022, 43(10): 102301 Copy Citation Text show less
    (Color online) Structure Diagram of the SPAD.
    Fig. 1. (Color online) Structure Diagram of the SPAD.
    (Color online) (a) Edge of double diffusion profile of the optimized device observed by SEM. (b) Simulated optimized device electric field diagram after breakdown (Vex = 0.5 V).
    Fig. 2. (Color online) (a) Edge of double diffusion profile of the optimized device observed by SEM. (b) Simulated optimized device electric field diagram after breakdown (Vex = 0.5 V).
    (Color online) (a) Dark current versus reverse bias voltage at different temperatures and the photo current versus reverse bias voltage at 298 K. (b) Breakdown voltage versus temperature data (symbols) and linear fitting (line).
    Fig. 3. (Color online) (a) Dark current versus reverse bias voltage at different temperatures and the photo current versus reverse bias voltage at 298 K. (b) Breakdown voltage versus temperature data (symbols) and linear fitting (line).
    (Color online) Dark current versus multiplication factor and its linear curve fit at 298 K.
    Fig. 4. (Color online) Dark current versus multiplication factor and its linear curve fit at 298 K.
    (Color online) Natural logarithm ofId /T2 versuse/kT at different reverse voltages.
    Fig. 5. (Color online) Natural logarithm ofId /T2 versuse/kT at different reverse voltages.
    (Color online) The test system diagram of dual-balanced single-photon detectors.
    Fig. 6. (Color online) The test system diagram of dual-balanced single-photon detectors.
    (Color online) Dual SPADs balanced detector with fiber-coupled package.
    Fig. 7. (Color online) Dual SPADs balanced detector with fiber-coupled package.
    (Color online) Oscilloscope output under different conditions. (a) The external single period sinusoidal pulse gating signal. (b) Capacitive spike pulse responses of the individual APD1 in the dark with a single sinusoidal signal biased. (c) Output in the absence of incident photons, two SPAD sinusoidal bursts biased. (d) Output when a photon is incident and an avalanche pulse is generated.
    Fig. 8. (Color online) Oscilloscope output under different conditions. (a) The external single period sinusoidal pulse gating signal. (b) Capacitive spike pulse responses of the individual APD1 in the dark with a single sinusoidal signal biased. (c) Output in the absence of incident photons, two SPAD sinusoidal bursts biased. (d) Output when a photon is incident and an avalanche pulse is generated.
    (Color online) The photon detection efficiency versus dark count rate at different temperatures.
    Fig. 9. (Color online) The photon detection efficiency versus dark count rate at different temperatures.
    (Color online) The relationship between NEP and excess bias voltage at different temperatures.
    Fig. 10. (Color online) The relationship between NEP and excess bias voltage at different temperatures.
    Ref.Active area diameter (μm)Temperature (K)Photon wavelength (nm)DCR (kcps)@ PDE (%)NEP (10−17W/Hz1/2)Year
    aCalculated from dark count probability and 150ps pulse width.bCalculated from DCR and PDE.
    [33]16238155059.3a@48%9.2b2020
    [27]252331550340@60%17.6b2020
    [26]10225155020@50%5.13b2021
    [28]1223315500.665@30%1.56b2022
    [29]70225155055@43%9.89b2022
    This work20247155043.8@55.4%6.52022
    Table 1. Comparision of our detector with similar detectors recently described in literature.
    Tingting He, Xiaohong Yang, Yongsheng Tang, Rui Wang, Yijun Liu. High photon detection efficiency InGaAs/InP single photon avalanche diode at 250 K[J]. Journal of Semiconductors, 2022, 43(10): 102301
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