Transfer process of LT-GaAs epitaxial films for on-chip terahertz antenna integrated device

GUO Chun-Yan; XU Jian-Xing; PENG Hong-Ling; NI Hai-Qiao; WANG Tao; TIAN Jin-Shou; NIU Zhi-Chuan; WU Zhao-Xin; ZUO Jian; ZHANG Cun-Lin

doi:10.11972/j.issn.1001-9014.2017.02.016

Journals >Journal of Infrared and Millimeter Waves >Volume 36 >Issue 2 >Page 220 > Article

Journal of Infrared and Millimeter Waves
Vol. 36, Issue 2, 220 (2017)

Transfer process of LT-GaAs epitaxial films for on-chip terahertz antenna integrated device

GUO Chun-Yan^{1、2、3、*}, XU Jian-Xing^3、4, PENG Hong-Ling⁵, NI Hai-Qiao⁴, WANG Tao¹, TIAN Jin-Shou¹, NIU Zhi-Chuan⁴, WU Zhao-Xin², ZUO Jian⁶, and ZHANG Cun-Lin⁶

Author Affiliations

¹[in Chinese]

²[in Chinese]

³[in Chinese]

⁴[in Chinese]

⁵[in Chinese]

⁶[in Chinese]

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DOI: 10.11972/j.issn.1001-9014.2017.02.016 Cite this Article

GUO Chun-Yan, XU Jian-Xing, PENG Hong-Ling, NI Hai-Qiao, WANG Tao, TIAN Jin-Shou, NIU Zhi-Chuan, WU Zhao-Xin, ZUO Jian, ZHANG Cun-Lin. Transfer process of LT-GaAs epitaxial films for on-chip terahertz antenna integrated device[J]. Journal of Infrared and Millimeter Waves, 2017, 36(2): 220 Copy Citation Text

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Abstract

A process for LT-GaAs used as photoconductive switch in epitaxial layer transfer of on-chip THz antenna integrated device was provided. Hall indicated resistivity of the epitaxial materials gained by MBE was about 106Ω·cm. HNO3-NH4OH-H2O-C3H8O7·H2O-H2O2-HCl and wet chemical etching were used to etch epitaxial materials grown by MBE. Gained the structure that 1.5μm LT-GaAs bounded with COP after lift-off of SI-GaAs and Al0.9Ga0.1As. AFM、SEM and high-power microscope indicated that the structure was flat and smooth after lift-off. RMS=2.28 nm. EDAX indicated there wasn’t Al in this structure. It can be used to make photoconductive switch.

Keywords

epitaxial layer transfer LT-GaAs on-chip THz antenna integrated device wet chemical etching

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