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Journal of Infrared and Millimeter Waves
Contents
2017
Volume: 36 Issue 2
20 Article(s)
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A prototype photon detector based on interband transition of quantum wells
LIU Jie, WANG Lu, JIANG Yang, MA Zi-Guang, WANG Wen-Qi, SUN Ling, JIA Hai-Qiang, WANG Wen-Xin, and CHEN Hong
Recently, a high localized carrier extraction efficiency and increasing of absorption coefficient was observed in low-dimensional semiconductors within a PN junction. Such phenomenon provides the possibility of fabricating novel high performance quantum well interband transition detector. In this work, we report the pe
Recently, a high localized carrier extraction efficiency and increasing of absorption coefficient was observed in low-dimensional semiconductors within a PN junction. Such phenomenon provides the possibility of fabricating novel high performance quantum well interband transition detector. In this work, we report the performance of the first photon detector based on the interband transition of strained InGaAs/GaAs quantum wells. The external quantum efficiency of the device was measured to be 31% using an absorption layer with only 100nm effective thickness and without an anti-reflection layer. Using such high value of quantum efficiency, an absorption coefficient of 3.7×104 cm-1 is calculated, which is obviously larger than previously reported values. The results here demonstrate the possibility of fabricating high performance and low cost infrared photon detectors..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 36, Issue 2, 129 (2017)
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Low-defect surfaces of low-temperature GaSb thin films on GaSb substrates
HAO Rui-Ting, REN Yang, LIU Si-Jia, GUO Jie, WANG Guo-Wei, XU Ying-Qiang, and NIU Zhi-Chuan
The influence on the low-defect surface of GaSb thin-film material by the ratio of Sb to Ga (V/III) along with the reducing of the growth temperature was investigated systematically. In order to obtain a good surface morphology of the GaSb epitaxial layer with low defect, both of the growth temperature and the V/III ra
The influence on the low-defect surface of GaSb thin-film material by the ratio of Sb to Ga (V/III) along with the reducing of the growth temperature was investigated systematically. In order to obtain a good surface morphology of the GaSb epitaxial layer with low defect, both of the growth temperature and the V/III ratio should be reduced at the same time. The optimal growth conditions of Low-temperature GaSb thin films are that the growth temperature is Tc+60℃ and the V/III ratio is about 7.1 when Sb cracker temperature is 900℃..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 36, Issue 2, 135 (2017)
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Optoelectronic properties of SnO
2
/p-Si heterojunction prepared by a simple chemical bath deposition method
HE Bo, XU Jing, NING Huan-Po, ZHAO Lei, XING Huai-Zhong, CHANG Chien-Cheng, QIN Yu-Ming, and ZHANG Lei
The SnO2 film was successfully deposited on Si wafer by a simple chemical bath method to fabricate n-SnO2/p-Si heterojunction structure photoelectric device. The self-made chemical bath system is very cheap and convenient. The structural, optical and electrical properies of the SnO2 film were studied by XRD, SEM, XPS,
The SnO2 film was successfully deposited on Si wafer by a simple chemical bath method to fabricate n-SnO2/p-Si heterojunction structure photoelectric device. The self-made chemical bath system is very cheap and convenient. The structural, optical and electrical properies of the SnO2 film were studied by XRD, SEM, XPS, PL, UV-VIS spectrophotometer and Hall effect measurement. The current-voltage (I-V) curve of SnO2/p-Si heterojunction device was tested and analyzed in detail. SnO2/p-Si heterojunction shows a prominent visible-light-driven photoelectrical performance under the low intensity light irradiation. Great photoelectric behavior was also obtained..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 36, Issue 2, 139 (2017)
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Effect of cation ratio on structural and electrical properties of Mn
x
Co
y
Ni
3-x-y
O
4
thin films
ZHANG Fei, WU Jing, OUYANG Cheng, ZHOU Wei, GAO Yan-Qing, and HUANG Zhi-Ming
Thin films of Mn-Co-Ni-O (MCNO) with different cation ratios were deposited by the magnetron sputtering method. By analyzing the material structure, it can be found that the grain size grows gradually with increasing Co cation number with constant Mn cation number, while the lattice parameter grows first and then decre
Thin films of Mn-Co-Ni-O (MCNO) with different cation ratios were deposited by the magnetron sputtering method. By analyzing the material structure, it can be found that the grain size grows gradually with increasing Co cation number with constant Mn cation number, while the lattice parameter grows first and then decreases. The preferential orientation of thin films changes from (311) plane to (400) plane with increasing Mn cation number and the properties of thin films are unstable when the Co cation number is constant. The electrical properties show that both of Mn cations and Co cations participate in the conductivity, and Mn1.2Co1.5Ni0.3O4 has the lowest resistivity (235 Ω·cm) as well as the highest negative temperature coefficient of resistance (NTCR) |α295| (47%·K-1) at room temperature..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 36, Issue 2, 144 (2017)
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Focal shift of silicon microlens array in mid-infrared regime
ZUO Hai-Jie, YANG Wen, ZHANG Jiang-Yong, YING Lei-Ying, ZHANG Bao-Ping, HOU Zhi-Jin, CHEN Hong-Xu, and SI Jun-Jie
In this study rigorous numerical model was utilized to characterize the focal shift of the diffractive mid-infrared (MIR) silicon microlens arrays (MLAs) with the critical size smaller than the working wavelength. We found a more pronounced focal shift in mid-infrared wavelength which is out of the range predicted by e
In this study rigorous numerical model was utilized to characterize the focal shift of the diffractive mid-infrared (MIR) silicon microlens arrays (MLAs) with the critical size smaller than the working wavelength. We found a more pronounced focal shift in mid-infrared wavelength which is out of the range predicted by existing models. Focal properties of the MLAs were also measured experimentally. The results agrees well with the simulation results. Our results provide a reference point in understanding the focal shift in MIR regime, which is important in terms of deciding the focal length of micro-nano lens systems, especially when dealing with the integration of diffractive devices in infrared optical system..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 36, Issue 2, 149 (2017)
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Influence of microcavity effect on modulation response in 1.3 μm quantum dot photonic crystal nanocavity lasers
XING En-Bo, RONG Jia-Min, TONG Cun-Zhu, TIAN Si-Cong, WANG Li-Jie, SHU Shi-Li, and WANG Li-Jun
It had been proposed that the microcavity effect could enhance the spontaneous emission rate and hence dramatically increase the modulation speed. However, the work in this paper reveals that the situation might not be completely correct for the 1.3 μm GaAs based quantum dot (QD) photonics crystal (PhC) nanolasers due
It had been proposed that the microcavity effect could enhance the spontaneous emission rate and hence dramatically increase the modulation speed. However, the work in this paper reveals that the situation might not be completely correct for the 1.3 μm GaAs based quantum dot (QD) photonics crystal (PhC) nanolasers due to the complex carrier dynamics and close hole levels. Based on the all-pathway rate equation model considering the carrier relaxation dynamics, the influences of quality (Q) factor of cavity on the threshold and modulation responses of 1.3 μm QD PhC nanolasers were studied. It is found that the high Q factor can improve significantly the threshold of QD PhC nanolasers, but it also increases the photon lifetime and deteriorates the modulation bandwidth. Hence there exists an optimized Q factor (~2500) for the nanolaser with a modulation bandwidth exceeding 100 GHz. For the energy consumption, the best value corresponds to a Q factor of ~7 000. So an overall consideration is preferable in designing PhC nanocavity for both high speed and low energy consumption operation of QD lasers..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 36, Issue 2, 160 (2017)
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0.5 μm InP DHBT technology for 100 GHz+ mixed signal integrated circuits
CHENG Wei, ZHANG You-Tao, WANG Yuan, NIU Bin, LU Hai-Yan, CHANG Long, and XIE Jun-Ling
A high performance 3-inch 0.5 μm InP double heterojunction bipolar transistor (DHBT) technology with three interconnect layers has been developed. The epitaxial layer structure and geometry parameters of the device were carefully studied to get the needed performance. The 0.5 μm×5μm InP DHBTs demonstrated ft = 350
A high performance 3-inch 0.5 μm InP double heterojunction bipolar transistor (DHBT) technology with three interconnect layers has been developed. The epitaxial layer structure and geometry parameters of the device were carefully studied to get the needed performance. The 0.5 μm×5μm InP DHBTs demonstrated ft = 350 GHz, fmax= 532 GHz and BVCEO= 4.8 V, which were modeled using Agilent-HBT large signal model. Static and dynamic frequency dividers designed and fabricated with this technology have demonstrated maximum clock frequencies of 114 GHz and 170 GHz, respectively. The ultra high speed 0.5 μm InP DHBT technology offers a combination of ultra high speed and high breakdown voltage, which makes it an ideal candidate for next generation 100 GHz+ mixed signal integrated circuits..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 36, Issue 2, 167 (2017)
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Review of nonlinear unmixing for hyperspectral remote sensing imagery
YANG Bin, and WANG Bin
The development of non-linear spectral unmixing methods in recent years is introduced. There are mainly two types of models. One is the close-mixing model of mineral sand area and the other is multi-level mixing model of vegetation coverage area. The data-driven nonlinear spectral unmixing algorithms such as kernel met
The development of non-linear spectral unmixing methods in recent years is introduced. There are mainly two types of models. One is the close-mixing model of mineral sand area and the other is multi-level mixing model of vegetation coverage area. The data-driven nonlinear spectral unmixing algorithms such as kernel methods and manifold learning are presented. Both advantages and disadvantages of these models and algorithms are summarized and the future research trends are analyzed..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 36, Issue 2, 173 (2017)
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Dark current mechanism in long-wavelength HgCdTe infrared detectors on alternative substrates
ZHAO Zhen-Dian, CHEN Lu, FU Xiang-Liang, WANG Wei-Qiang, SHEN Chuan, ZHANG Bin, BU Shun-Dong, WANG Gao, YANG Feng, and HE Li
The dark current characteristics of long-wavelength HgCdTe were analyzed for three types of devices. By I-V measurement under different temperatures, the dominant dark currents of each device were clarified at different temperatures. It is demonstrated that the dark current of B+-implanted n+-on-p planar junction on si
The dark current characteristics of long-wavelength HgCdTe were analyzed for three types of devices. By I-V measurement under different temperatures, the dominant dark currents of each device were clarified at different temperatures. It is demonstrated that the dark current of B+-implanted n+-on-p planar junction on silicon substrate is comparable with that on bulk cadmium zinc telluride (CdZnTe) substrate above 80 K. However, the trap-assisted tunneling current becomes dominant below 80 K due to the high density of dislocations. Compared with n+-on-p junctions, the p+-on-n double-layer heterojunction inhibits the diffusion current effectively, which is good matched with the calculation result with the parameters, derived from I-V curve fitting. This p+-on-n diode has a R0A value of 38 Ω·cm2 at 80 K, for the cut-off wavelength of 9.6 μm, while that of the n+-on-p diode on bulk CdZnTe is 2.5 Ω·cm2. Below 60 K, the dislocations make the R0A value of the p+-on-n diode an order of magnitude lower than that of the n+-on-p diode on CdZnTe..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 36, Issue 2, 186 (2017)
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A tubular quantum well infrared photodetector under vertically-incident light coupling
WANG Han, LI Shi-Long, ZHEN Hong-Lou, LI Meng-Yao, NIE Xiao-Fei, HUANG Gao-Shan, MEI Yong-Feng, and LU Wei
A three-dimensional tubular quantum well infrared photodetector (QWIP) was demonstrated via rolled-up technology, which is on the basis of conventional lithography and wet chemical etching. When the tubular QWIPs and the corresponding planar devices were illuminated by the vertically-incident light, their dark current,
A three-dimensional tubular quantum well infrared photodetector (QWIP) was demonstrated via rolled-up technology, which is on the basis of conventional lithography and wet chemical etching. When the tubular QWIPs and the corresponding planar devices were illuminated by the vertically-incident light, their dark current, blackbody response, and photocurrent responsivity spectra were characterized. Under the operating temperature of 60 K and the bias of 0.45 V, a peak responsivity of 20.6 mA/W and a peak quantum efficiency of 2.3% at the peak response wavelength of 3.62 μm were obtained in the tubular devices. By clarifying the principle of optical absorption, the tubular QWIP presents a novel optical coupling manner. The photocurrent responsivity spectra of the device for the external light were further studied at different incident angles. It is shown that with the approximately circular symmetry of the microtubes, the tubular devices have a wide perspective, which is advantageous to the design of infrared detection system..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 36, Issue 2, 191 (2017)
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Optical time domain reflectometer based on high-speed single-photon detection
NI Wen-Jin, CHEN Jie, LIANG Yan, and ZENG He-Ping
Conventional optical time domain reflectometer (OTDR) not only requires high-power laser output and long cumulative time but also exhibites low resolution. To solve the problem this paper proposes an OTDR with a high-speed single-photon detector based on InGaAs/InP avalanche photodiode. The working repetition frequency
Conventional optical time domain reflectometer (OTDR) not only requires high-power laser output and long cumulative time but also exhibites low resolution. To solve the problem this paper proposes an OTDR with a high-speed single-photon detector based on InGaAs/InP avalanche photodiode. The working repetition frequency of this single-photon detector was 1 GHz, achieving "quasi-continuous" detection, realizing quick capture of return signal at single-photon level without scanning. With the emitting pulsed laser of 50 ps pulse width and 10 mW peak power, this OTDR whose event dead zone is less than 1 m, could obtain the longest measuring distance of 50 km with 10 cm accuracy..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 36, Issue 2, 196 (2017)
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Preparation and optical bandgap of Mg
2
Si film deposited by electron beam evaporation
XIAO Qing-Quan, FANG Di, ZHAO Ke-Jie, LIAO YANG-Fang, CHEN Qian, and XIE Quan
As an advanced ecological friendly semiconducting material, the researches on the preparation methods and optical properties of Mg2Si film play a fundamental role in the applications and development of Mg2Si films. Semiconducting Mg2Si films were prepared by electron beam evaporation deposition of Mg film onto Si (111)
As an advanced ecological friendly semiconducting material, the researches on the preparation methods and optical properties of Mg2Si film play a fundamental role in the applications and development of Mg2Si films. Semiconducting Mg2Si films were prepared by electron beam evaporation deposition of Mg film onto Si (111) substrate and subsequent heat treatment under Ar gas atmosphere. X-ray diffraction (XRD), scanning electron microscopy (SEM) and spectrometer were used to characterize and analyze the obtained Mg2Si films. Effects of heat treatment time (3~7 h) at 500 ℃ under Ar gas pressure (200 Pa) on the formation of Mg2Si films were investigated. The XRD and SEM results show that semiconducting Mg2Si films are obtained by electron beam evaporation deposition and subsequent heat treatment at 500 ℃ for 3-7 h. 4 h is optimal heat treatment time to prepare Mg2Si films when heat treated at 500 ℃, and the compact Mg2Si films are obtained. The calculational results of infrared transmittance spectra of the Mg2Si films show that the indirect optical bandgap of the Mg2Si films is 0.943 3 eV, and the direct optical bandgap is 1.158 eV. These experimental data are beneficial to the device research and development of the Mg2Si films in the preparation process and optical properties..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 36, Issue 2, 202 (2017)
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Identification and orientation of connected defective elements in FPA
HOU Zhi-Jin, FU Li1, SI Jun-Jie, WANG Wei, LV Yan-Qiu, LU Zheng-Xiong, and WANG Jin-Chun
It is difficult to identify connected defective elements by FPA test-bench because the response voltage of connected defective elements is basically the same as that of normal pixels. In this paper identification and orientation of connected defective elements in focal plane array (FPA) are presented. According to the
It is difficult to identify connected defective elements by FPA test-bench because the response voltage of connected defective elements is basically the same as that of normal pixels. In this paper identification and orientation of connected defective elements in focal plane array (FPA) are presented. According to the characteristics of connected defective elements, we proposed a novel method which realizes the identification and orientation of connected defective elements by measuring the response voltage of detectors. Results show that the response voltage of detector can be divided into two sections by using the proposed method. The response voltage of connected defective elements is average of corresponding response voltage of the two sections. The test data is analyzed by MATLAB software and the particular information of connected defective elements such as number, shape and location is shown. The connected defective elements are identified and orientated markedly by the technique. Our study presents a crucial step for testing and evaluating FPA..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 36, Issue 2, 208 (2017)
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340 GHz frequency one stage quadrupler based on Schottky varactors and CSMRs filter
JIANG Jun, LIU Jie, SHI Xiang-Yang, LU Bin, DENG Xian-Jin, HAO Hai-Long, and ZHANG Jian
High frequency and power source is most important for terahtz technology, and multipliers is common electronic way. This quadrupler design is only one stage to avoid impedance mismatches between multipliers. A proposed Schottky diode model improves the accuracy of design, which has considered the behaviors of current v
High frequency and power source is most important for terahtz technology, and multipliers is common electronic way. This quadrupler design is only one stage to avoid impedance mismatches between multipliers. A proposed Schottky diode model improves the accuracy of design, which has considered the behaviors of current voltage (I/V), capacitance voltage (C/V), plasma resonance, and skin effect. Theoretical analysis was carried out by using harmonic balance simulations programs and three-dimensional finite element simulation tools to find the optimum embedding impedance for a given diode. Compact Suspended Microstrip Resonators (CSMRs) minimize the length/width ratio and make short idlers at the 2nd and 3rd harmonics. The experiment shows: the quadupler works at 325~351 GHz and output power is above 1mW between 334 GHz and 346 GHz, and the highest efficiency is above 3% with input power of 100 mW..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 36, Issue 2, 214 (2017)
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Transfer process of LT-GaAs epitaxial films for on-chip terahertz antenna integrated device
GUO Chun-Yan, XU Jian-Xing, PENG Hong-Ling, NI Hai-Qiao, WANG Tao, TIAN Jin-Shou, NIU Zhi-Chuan, WU Zhao-Xin, ZUO Jian, and ZHANG Cun-Lin
A process for LT-GaAs used as photoconductive switch in epitaxial layer transfer of on-chip THz antenna integrated device was provided. Hall indicated resistivity of the epitaxial materials gained by MBE was about 106Ω·cm. HNO3-NH4OH-H2O-C3H8O7·H2O-H2O2-HCl and wet chemical etching were used to etch epitaxial
A process for LT-GaAs used as photoconductive switch in epitaxial layer transfer of on-chip THz antenna integrated device was provided. Hall indicated resistivity of the epitaxial materials gained by MBE was about 106Ω·cm. HNO3-NH4OH-H2O-C3H8O7·H2O-H2O2-HCl and wet chemical etching were used to etch epitaxial materials grown by MBE. Gained the structure that 1.5μm LT-GaAs bounded with COP after lift-off of SI-GaAs and Al0.9Ga0.1As. AFM、SEM and high-power microscope indicated that the structure was flat and smooth after lift-off. RMS=2.28 nm. EDAX indicated there wasn’t Al in this structure. It can be used to make photoconductive switch..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 36, Issue 2, 220 (2017)
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Estimation of multi-scale urban vegetation coverage based on multi-source remote sensing images
GAO Yong-Gang, and XU Han-Qiu
The vegetation coverage from multi-source at multi-scale and multi-source at the same scale in urban area was studied. The Landsat 7 ETM+, SPOT 5 and IKONOS remote sensing image data were taken as the data source. The vegetation coverage with different spatial resolutions derived from a 1∶500 topographic map as the ref
The vegetation coverage from multi-source at multi-scale and multi-source at the same scale in urban area was studied. The Landsat 7 ETM+, SPOT 5 and IKONOS remote sensing image data were taken as the data source. The vegetation coverage with different spatial resolutions derived from a 1∶500 topographic map as the reference map by grid method was taken as reference. The accuracies of fraction vegetation coverage extracted from the images, wich were radiometrically corrected using different models, were compared. An optimal radiometric correction model for the extraction of fraction vegetation coverage in urban areas was proposed. The results show that ICM model is the best radiometric correction model for estimating fraction vegetation coverage in urban area. NDVI is the best vegetation index for fraction vegetation coverage estimation for high resolution remote sensing images, while the best vegetation indices for estimating fraction vegetation coverage from moderate spatial resolution images are the RVI and MSAVI. For the studies area, the GI model is more accurate than the CR model in estimating the vegetation coverage..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 36, Issue 2, 225 (2017)
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Analysis on the impact of non-spherical aerosol on polarized radiative transfer in near-infrared band and its equivalent-sphere errors
HU Shuai, GAO Tai-Chang, LI Hao, CHENG Tian-Ji, CHEN Ming, LIU Lei, and ZHANG Ting
In order to estimate the impact of non-spherical aerosol on polarized radiative transfer, the sensitivity of radiance and polarized radiance to aerosol shape was analyzed based on T Matrix method and MACAR_VSPART. In addition, the simulation errors due to the approximation that taking the non-spherical particles as sph
In order to estimate the impact of non-spherical aerosol on polarized radiative transfer, the sensitivity of radiance and polarized radiance to aerosol shape was analyzed based on T Matrix method and MACAR_VSPART. In addition, the simulation errors due to the approximation that taking the non-spherical particles as sphere ones were discussed. The simulation results show that, for radiance and polarized radiance, shape sensitivities are different at different directions. The angular distributions of shape sensitivity coefficient are typical for specified solar zenith angles, which is helpful for the data selection of remote sensing process to avoid the influence of aerosol shape. Obvious simulation errors are caused by taking the non-spherical aerosol particles as sphere ones, especially for polarized radiance. The impact of shape on upwelling diffuse light at the top of atmosphere is much stronger than down-welling diffuse light at surface..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 36, Issue 2, 235 (2017)
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The high-frequency characteristics of an open ridged loaded folded waveguide slow-wave circuit
LV Su-Ye, ZHANG Chang-Qing, and WANG Yong
An open ridged loaded folded waveguide slow-wave circuit has been proposed in this paper. By removing the metal boundary of the straight waveguide, an open structure has been formed to reduce the dispersion, while the ridge has been loaded to improve coupling impedance. Compared to the conventional structure the improv
An open ridged loaded folded waveguide slow-wave circuit has been proposed in this paper. By removing the metal boundary of the straight waveguide, an open structure has been formed to reduce the dispersion, while the ridge has been loaded to improve coupling impedance. Compared to the conventional structure the improved circuit structure not only increases the interaction impedance significantly but also keeps the dispersion characteristics well. Especially in the high-power design the coupling impedance is nearly doubled..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 36, Issue 2, 246 (2017)
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330 GHz GaAs monolithic integrated sub-harmonic mixer
LIU Ge, ZHANG Bo, ZHANG Li-Sen, WANG Jun-Long, XING Dong, and FAN Yong
In the terahertz band, diode size can no longer be ignored compared with the wavelength, significant parasitic parameters will be introduced due to diode package. So it is very necessary to establish three-dimensional model to extract parasitic parameters. Meanwhile manual assembly becomes more difficult, circuit uncer
In the terahertz band, diode size can no longer be ignored compared with the wavelength, significant parasitic parameters will be introduced due to diode package. So it is very necessary to establish three-dimensional model to extract parasitic parameters. Meanwhile manual assembly becomes more difficult, circuit uncertainty will increase. Based on planar Schottky barrier diode designed by China Electronics Technology Group Corporation-13(CETC-13) and University of Electronic Science and Technology of China(UESTC) fabricated on 12 μm thick suspended GaAs substrate a 330 GHz GaAs monolithic integrated sub-harmonic mixer is presented. Test results show that the minimum conversion loss is 10.4 dB at 328 GHz. SSB conversion loss is less than 14.7 dB from 320~340 GHz when the LO power is 5 mW..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 36, Issue 2, 252 (2017)
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Design and improvement of an antipodal Vivaldi antenna
Liu Yu, Xia Xinlin, and Yang Tao
In this paper, a novel antipodal Vivaldi antenna (AVA) is presented. The radiation flares were modified by a new composite compound exponential curve. A novel director containing two hybrid elliptical metal patches was adopted to improve the radiation parameters (gain, beam tilts and cross-polarization). The measuremen
In this paper, a novel antipodal Vivaldi antenna (AVA) is presented. The radiation flares were modified by a new composite compound exponential curve. A novel director containing two hybrid elliptical metal patches was adopted to improve the radiation parameters (gain, beam tilts and cross-polarization). The measurement results show that the proposed antenna operates from 1 GHz to more than 40 GHz with peak gain >0 dBi in the range of 1~40 GHz and >12 dBi over the 15~40 GHz range. The squinted beam of E-plane is less than 3° from 3 to 40 GHz and less than 2° from 20 to 40 GHz..
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Journal of Infrared and Millimeter Waves
Publication Date: Jan. 01, 1900
Vol. 36, Issue 2, 2017 (2017)
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