Jie Feng, Yudong Li, Lin Wen, Qi Guo. Degradation mechanism of star sensor performance caused by radiation damage of CMOS image sensor[J]. Infrared and Laser Engineering, 2020, 49(5): 20190555
- Infrared and Laser Engineering
- Vol. 49, Issue 5, 20190555 (2020)
Fig. 1. Schematic diagram of 4T pixel cross section
Fig. 2. Change of dark current versus the total ionizing dose
Fig. 3. Change of DSNU versus the total ionizing dose
Fig. 4. Ionizing damage defect distribution
Fig. 5. Schematic of test device
Fig. 6. Change of SNR versus the total ionizing dose at different detection magnitudes
Fig. 7. Change of dark current noise of CMOS image sensor versus the detection magnitude
Fig. 8. Change of dark signal nonuniformity noise of CMOS image sensor versus the detection magnitude
Fig. 9. Static star simulator imaging pictures taken by CMOS with different proton radiation fluence (proton energy: 3 MeV). (a) Proton radiation fluence is 0; (b) proton radiation fluence is 1.47×1010 p/cm2; (c) proton radiation fluence is 3.68×1010 p/cm2;(d) proton radiation fluence is 7.36×1010 p/cm2
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Table 1. Total noise of CMOS image sensor at different dose points and different detection magnitudes
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Table 2. Target shot noise of single star at different detection magnitudes
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Table 3. SNR of G0 star at different dose points and different detection magnitudes
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