• Infrared and Laser Engineering
  • Vol. 49, Issue 5, 20190555 (2020)
Jie Feng, Yudong Li, Lin Wen, and Qi Guo
Author Affiliations
  • Laboratory of Solid State Radiation Physics, Xinjiang Technical Institute of Physics and Chemistry of Chinese Academy of Sciences, Urumqi 830011, China
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    DOI: 10.3788/IRLA20190555 Cite this Article
    Jie Feng, Yudong Li, Lin Wen, Qi Guo. Degradation mechanism of star sensor performance caused by radiation damage of CMOS image sensor[J]. Infrared and Laser Engineering, 2020, 49(5): 20190555 Copy Citation Text show less

    Abstract

    In order to analyze the reasons for star sensor performance degradation and the decrease of attitude measurement accuracy, performance degradation mechanisms of star sensor caused by Complementary Metal Oxide Semiconductor (CMOS) image sensor radiation damage were mainly studied. By establishing the correlation among the spatial radiation, radiation sensitive parameters of CMOS image sensor and the performance parameters of star sensor, the transmission mechanism from CMOS image sensor device parameters degradation to star sensor system parameters degradation was revealed. The 60Co-γ irradiation test showed that the decrease of signal-to-noise ratio led to the decrease of star sensor detection sensitivity after irradiation, and the signal-to-noise ratio was the bridge between the CMOS image sensor and the star sensor system. The proton irradiation test showed that when the irradiation fluence was more than 3.68×1010 p/cm2, the star point centroid could not be extracted correctly. The results lay a certain foundation for the research of star sensor attitude measurement error and correction technology, and also provide some theoretical basis for the design of high-precision star sensor.
    Jie Feng, Yudong Li, Lin Wen, Qi Guo. Degradation mechanism of star sensor performance caused by radiation damage of CMOS image sensor[J]. Infrared and Laser Engineering, 2020, 49(5): 20190555
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