Ruifeng Ming, Yayi Wei, Lisong Dong. Influence of Optical System Aberration on Critical Dimension of EUV Lithography Imaging[J]. Acta Optica Sinica, 2019, 39(12): 1222001
- Acta Optica Sinica
- Vol. 39, Issue 12, 1222001 (2019)
Fig. 1. Wavefront distributions of four typical aberrations and test diagrams
Fig. 2. Variation of critical dimension with focus length of lines with different orientations under different aberrations. (a) Horizontal line; (b) vertical line; (c) critical dimension differences of horizontal and vertical lines
Fig. 3. Variation of critical dimension with focus length of short lines with different aberrations. (a) 1st line; (b) 5th line; (c) critical dimension differences of 1st and 5th lines
Fig. 4. Best focus length varying with pitch under different aberrations
Fig. 5. Critical dimensions of left and right ends of horizontal short line varying with focus length under different aberrations. (a) Left end; (b) right end; (c) difference of critical dimensions of left and right ends
Fig. 6. Critical dimension varying with focus length of test structure corresponding to Z5 model. (a) Horizontal line; (b) vertical line
Fig. 7. Critical dimension varying with focus length of test structure corresponding to Z7 model. (a) 1st line; (b) 2nd line
Fig. 8. Critical dimension varying with focus length of test structure corresponding to Z10 model. (a) Left end of horizontal short line; (b) right end of horizontal short line
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Table 1. Optical parameters of partial materials
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