In comparison with traditional immersion lithography, extreme ultraviolet (EUV) lithography at a wavelength of 13.5 nm has become a promising technology. While imaging resolution has been greatly improved, aberration tolerances must be strengthened as they scale with wavelength, and a greater understanding of the effect of aberration on EUV lithography imaging is urgently needed. Focusing on the wave front characteristics of four kinds of typical aberrations, this study establishes corresponding aberration models according to their characteristics to explore the influence of aberration on lithographic imaging critical dimension and best focus bias. The maximum allowable range of single aberrations under required focus depths is provided. The total values of the four kinds of aberrations are controlled within 0.04λ, and the analysis is repeated to determine the requirements the aberrations needed in actual demand from the simulation. Based on these results, total aberrations should be controlled within 0.025λ, about 0.34 nm.