• Journal of Semiconductors
  • Vol. 43, Issue 2, 021701 (2022)
Chao Li1、2、3, Jie Li4, Yanbin Huang5, Jun Liu1、2、3, Mengmeng Ma1、2、3, Kong Liu1、2、3, Chao Zhao1、2、3, Zhijie Wang1、2、3, Shengchun Qu1、2、3, Lei Zhang5, Haiyan Han5, Wenshuang Deng5, and Zhanguo Wang1、2、3
Author Affiliations
  • 1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China
  • 3Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 4College of Mechanical and Electrical Engineering, Handan University, Handan 056005, China
  • 5School of Mathematical Science and Engineering, Hebei University of Engineering, Handan 056038, China
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    DOI: 10.1088/1674-4926/43/2/021701 Cite this Article
    Chao Li, Jie Li, Yanbin Huang, Jun Liu, Mengmeng Ma, Kong Liu, Chao Zhao, Zhijie Wang, Shengchun Qu, Lei Zhang, Haiyan Han, Wenshuang Deng, Zhanguo Wang. Recent development in electronic structure tuning of graphitic carbon nitride for highly efficient photocatalysis[J]. Journal of Semiconductors, 2022, 43(2): 021701 Copy Citation Text show less
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    Chao Li, Jie Li, Yanbin Huang, Jun Liu, Mengmeng Ma, Kong Liu, Chao Zhao, Zhijie Wang, Shengchun Qu, Lei Zhang, Haiyan Han, Wenshuang Deng, Zhanguo Wang. Recent development in electronic structure tuning of graphitic carbon nitride for highly efficient photocatalysis[J]. Journal of Semiconductors, 2022, 43(2): 021701
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