• Chinese Optics Letters
  • Vol. 20, Issue 3, 031402 (2022)
Lei Han1、2、3, Yuanbin Gao1、2、3, Sheng Hang1、2、3, Chunshuang Chu1、2、3、*, Yonghui Zhang1、2、3, Quan Zheng4, Qing Li4, and Zi-Hui Zhang1、2、3、**
Author Affiliations
  • 1State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300401, China
  • 2Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, China
  • 3Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin 300401, China
  • 4Key Engineering Center of Flat-Panel-Display Glass and Equipment, Shijiazhuang 050035, China
  • show less
    DOI: 10.3788/COL202220.031402 Cite this Article Set citation alerts
    Lei Han, Yuanbin Gao, Sheng Hang, Chunshuang Chu, Yonghui Zhang, Quan Zheng, Qing Li, Zi-Hui Zhang. Impact of p-AlGaN/GaN hole injection layer on GaN-based vertical cavity surface emitting laser diodes [Invited][J]. Chinese Optics Letters, 2022, 20(3): 031402 Copy Citation Text show less
    References

    [1] K. Iga. Forty years of vertical-cavity surface-emitting laser: invention and innovation. Jpn. J. Appl. Phys., 57, 08PA01(2018).

    [2] A. A. Bergh. Blue laser diode (LD) and light emitting diode (LED) applications. Phys. Stat. Sol., 201, 2740(2004).

    [3] T. Hamaguchi, Y. Hoshina, K. Hayashi, M. Tanaka, M. Ito, M. Ohara, T. Jyoukawa, N. Kobayashi, H. Watanabe, M. Yokozeki, R. Koda, K. Yanashima. Room-temperature continuous-wave operation of green vertical-cavity surface-emitting lasers with a curved mirror fabricated on {20−21} semi-polar GaN. Appl. Phys. Express, 13, 041002(2020).

    [4] A. Liu, P. Wolf, J. A. Lott, D. Bimberg. Vertical-cavity surface-emitting lasers for data communication and sensing. Photonics Res., 7, 121(2019).

    [5] Y. Higuchi, K. Omae, H. Matsumura, T. Mukai. Room-temperature CW lasing of a GaN-based vertical-cavity surface-emitting laser by current injection. Appl. Phys. Express, 1, 121102(2008).

    [6] G. Cosendey, A. Castiglia, G. Rossbach, J.-F. Carlin, N. Grandjean. Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate. Appl. Phys. Lett., 101, 151113(2012).

    [7] R. T. ElAfandy, J.-H. Kang, B. Li, T. K. Kim, J. S. Kwak, J. Han. Room-temperature operation of c-plane GaN vertical cavity surface emitting laser on conductive nanoporous distributed Bragg reflector. Appl. Phys. Lett., 117, 011101(2020).

    [8] J. T. Leonard, E. C. Young, B. P. Yonkee, D. A. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, S. Nakamura. Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact. Appl. Phys. Lett., 107, 091105(2015).

    [9] M. Kuramoto, S. Kobayashi, T. Akagi, K. Tazawa, K. Tanaka, T. Saito, T. Takeuchi. Enhancement of slope efficiency and output power in GaN-based vertical-cavity surface-emitting lasers with a SiO2-buried lateral index guide. Appl. Phys. Lett., 112, 111104(2018).

    [10] M. Kuramoto, S. Kobayashi, T. Akagi, K. Tazawa, H. Tanaka, T. Takeuchi. Nano-height cylindrical waveguide in GaN-based vertical-cavity surface-emitting lasers. Appl. Phys. Express, 13, 082005(2020).

    [11] S. Lee, C. A. Forman, J. Kearns, J. T. Leonard, D. A. Cohen, S. Nakamura, S. P. DenBaars. Demonstration of GaN-based vertical-cavity surface-emitting lasers with buried tunnel junction contacts. Opt. Express, 27, 31621(2019).

    [12] X. Qiu, Y. Zhang, S. Hang, Y. Gao, J. Kou, K. Tian, Q. Zheng, Q. Li, Z. H. Zhang. Enhancing the lateral current injection by modulating the doping type in the p-type hole injection layer for InGaN/GaN vertical cavity surface emitting lasers. Opt. Express, 28, 18035(2020).

    [13] D. H. Hsieh, A. J. Tzou, T. S. Kao, F. I. Lai, D. W. Lin, B. C. Lin, T. C. Lu, W. C. Lai, C. H. Chen, H. C. Kuo. Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer. Opt. Express, 23, 27145(2015).

    [14] B. C. Lin, Y. A. Chang, K. J. Chen, C. H. Chiu, Z. Y. Li, Y. P. Lan, C. C. Lin, P. T. Lee, Y. K. Kuo, M. H. Shih, H. C. Kuo, T. C. Lu, S. C. Wang. Design and fabrication of a InGaN vertical-cavity surface-emitting laser with a composition-graded electron-blocking layer. Laser Phys. Lett., 11, 085002(2014).

    [15]

    [16] P. Mackowiak, W. Nakwaski. Designing guidelines for possible continuous-wave-operating nitride vertical-cavity surface-emitting lasers. J. Phys. D, 33, 642(2000).

    [17] V. Fiorentini, F. Bernardini, O. Ambacher. Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures. Appl. Phys. Lett., 80, 1204(2002).

    [18] Z.-H. Zhang, S. Tiam Tan, Z. Kyaw, Y. Ji, W. Liu, Z. Ju, N. Hasanov, X. Wei Sun, H. Volkan Demir. InGaN/GaN light-emitting diode with a polarization tunnel junction. Appl. Phys. Lett., 102, 193508(2013).

    [19] Y.-K. Kuo, B.-T. Liou, M.-L. Chen, S.-H. Yen, C.-Y. Lin. Effect of band-offset ratio on analysis of violet–blue InGaN laser characteristics. Opt. Commun., 231, 395(2004).

    [20] W. Wang, C. Chu, J. Che, S. Hang, H. Shao, K. Tian, Y. Zhang, Z.-H. Zhang. Is a thin p-GaN layer possible for making high-efficiency AlGaN-based deep-ultraviolet light-emitting diodes?. Opt. Express, 29, 29651(2021).

    [21] D. Zhang, C. Chu, K. Tian, J. Kou, W. Bi, Y. Zhang, Z.-H. Zhang. Improving hole injection from p-EBL down to the end of active region by simply playing with polarization effect for AlGaN based DUV light-emitting diodes. AIP Adv., 10, 065032(2020).

    [22] C. Chu, K. Tian, J. Che, H. Shao, J. Kou, Y. Zhang, Z.-H. Zhang, H.-C. Kuo. On the impact of electron leakage on the efficiency droop for AlGaN based deep ultraviolet light emitting diodes. IEEE Photonics J., 12, 1600207(2020).

    [23] V. P. Kalosha, V. A. Shchukin, N. Ledentsov, N. N. Ledentsov. Comprehensive analysis of electric properties of oxide-confined vertical-cavity surface-emitting lasers. IEEE J. Sel. Top. Quantum Electron., 25, 1700809(2019).

    [24] F. Huang, X. Jia, Y. Liu, K. Tian, C. Chu, Q. Zheng, Y. Zhang, Z. Xin, Z.-H. Zhang, Q. Li. Advances of beveled mesas for GaN-based trench Schottky barrier diodes. AIP Adv., 11, 045316(2021).

    Data from CrossRef

    [1] Yuhan Zhang, Xuejiao Qiu, Chunshuang Chu, Yuanbin Gao, Sheng Hang, Quan Zheng, Yandi Zhang, Yonghui Zhang, Qing Li, Zi-Hui Zhang. Impact of an AlGaN thin insertion layer in the p-GaN region on InGaN/GaN vertical-cavity surface-emitting laser diodes. Micro and Nanostructures, 207425(2022).

    Lei Han, Yuanbin Gao, Sheng Hang, Chunshuang Chu, Yonghui Zhang, Quan Zheng, Qing Li, Zi-Hui Zhang. Impact of p-AlGaN/GaN hole injection layer on GaN-based vertical cavity surface emitting laser diodes [Invited][J]. Chinese Optics Letters, 2022, 20(3): 031402
    Download Citation