Impact of p-AlGaN/GaN hole injection layer on GaN-based vertical cavity surface emitting laser diodes [Invited]

Lei Han; Yuanbin Gao; Sheng Hang; Chunshuang Chu; Yonghui Zhang; Quan Zheng; Qing Li; Zi-Hui Zhang

doi:10.3788/COL202220.031402

Journals >Chinese Optics Letters >Volume 20 >Issue 3 >Page 031402 > Article

Chinese Optics Letters
Vol. 20, Issue 3, 031402 (2022)

Impact of p-AlGaN/GaN hole injection layer on GaN-based vertical cavity surface emitting laser diodes [Invited]

Lei Han^1、2、3, Yuanbin Gao^1、2、3, Sheng Hang^1、2、3, Chunshuang Chu^{1、2、3、*}, Yonghui Zhang^1、2、3, Quan Zheng⁴, Qing Li⁴, and Zi-Hui Zhang^{1、2、3、**}

Author Affiliations

¹State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300401, China

²Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, China

³Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin 300401, China

⁴Key Engineering Center of Flat-Panel-Display Glass and Equipment, Shijiazhuang 050035, China

show less

DOI: 10.3788/COL202220.031402 Cite this Article Set citation alerts

Lei Han, Yuanbin Gao, Sheng Hang, Chunshuang Chu, Yonghui Zhang, Quan Zheng, Qing Li, Zi-Hui Zhang. Impact of p-AlGaN/GaN hole injection layer on GaN-based vertical cavity surface emitting laser diodes [Invited][J]. Chinese Optics Letters, 2022, 20(3): 031402 Copy Citation Text

EndNote(RIS)

BibTex

Plain Text

show less

Cited By

Article index updated: Mar. 8, 2024

Citation counts are provided from Web of Science. The counts may vary by service, and are reliant on the availability of their data.