Due to the advantages of low threshold current, single longitudinal mode output, easy process for packaging, wafer level testing, and circular output beams, vertical cavity surface emitting lasers (VCSELs) have shown tremendous application potential in data communication, retinal scanning displays, medical laser, high density optical storage, printing and optical scanners, etc.[2–4]. Since the first, to the best of our knowledge, room-temperature electrically injected GaN-based VCSEL was achieved in 2008, great efforts have been made to achieve better lasing performance for GaN-based VCSELs[6–8]. However, the development of GaN-based VCSELs still faces quite a few challenges. One of the obstacles that hinder the lasing performance is lateral optical mode confinement. Lateral optical mode confinement can be realized by using the buried layer below indium-tin-oxide (ITO), where the design can also reduce the internal loss. However, an even easier method to achieve the lateral mode confinement is locally varying the cavity length, and therefore a nano-height cylindrical waveguide structure has been reported. Another obstacle that hinders the improvement for the laser power is low hole injection, which arises from the current crowding effect at the aperture periphery and the hole blocking effect by the p-AlGaN electron blocking layer (p-EBL). For the purpose of shaping the current paths for VCSELs, a tunnel-junction VCSEL and a VCSEL with a p-GaN/n-GaN/p-GaN structured current spreading layer are proposed to increase the current injection into the aperture[11,12]. Besides, the AlGaN/GaN multiple-quantum-barrier structured p-EBL and Al composition-graded p-EBL have been reported, which can promote the hole injection efficiency by reducing the valence band barrier height of p-EBL[13,14].