Author Affiliations
1School of Opto-Electronic Engineering, Changchun University of Science and Technology, Changchun, Jilin 130022, China2Optorun (Shanghai) Co., Ltd., Shanghai 200444, Chinashow less
Fig. 1. Schematic of film thickness deposited by twin target magnetron sputtering
Fig. 2. Horizontal uniformity distribution curves of film thickness of different materials. (a) Si3N4; (b) SiO2
Fig. 3. Corresponding relationship between target magnetic field uniformity and film thickness uniformity under different materials. (a) Si3N4; (b) SiO2
Fig. 4. Influence curves of target base distance of different materials on refractive index. (a) SiO2; (b) Si3N4
Fig. 5. Relationship between plasma density and film thickness of different materials. (a) Si3N4; (b) SiO2
Fig. 6. Uniformity distribution of transverse and longitudinal film thickness
Fig. 8. Longitudinal uniformity curves of film thickness of different materials. (a) Si3N4; (b) SiO2
Fig. 9. Influence curves of film thickness homogeneity under different conditions. (a) Amplitude; (b) phase
Fig. 10. Voltage change curve of target material after loading sinusoidal half wave voltage
Fig. 11. Transverse distribution curves of Si3N4 monolayer film spectrum. (a) Top; (b) middle; (c) bottom
Fig. 12. Transverse distribution curves of SiO2 monolayer film spectrum. (a) Top; (b) middle; (c) bottom
Fig. 13. Spectral distribution curves of hard antireflection film in different directions. (a) Transversal; (b) longitudinal
Material | Transverse uniformity /% |
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Top | Middle | Bottom |
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Si3N4 | ±1.27 | ±0.62 | ±1.33 | SiO2 | ±1.12 | ±0.42 | ±1.23 |
|
Table 1. Transverse uniformity results of two materials