Absorption measurement of optical thin films under high power density with a Closed Cavity

Xiaoting Fang; Shengfu Yuan; Wenguang Liu; Baozhu Yan; Bing Huang

doi:10.3788/COL201513.033101

Journals >Chinese Optics Letters >Volume 13 >Issue 3 >Page 033101 > Article

Chinese Optics Letters
Vol. 13, Issue 3, 033101 (2015)

Absorption measurement of optical thin films under high power density with a Closed Cavity

Xiaoting Fang, Shengfu Yuan^*, Wenguang Liu, Baozhu Yan, and Bing Huang

Author Affiliations

College of Optoelectric Science and Engineering, National University of Defence Technology, Changsha 410073, China

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DOI: 10.3788/COL201513.033101 Cite this Article Set citation alerts

Xiaoting Fang, Shengfu Yuan, Wenguang Liu, Baozhu Yan, Bing Huang. Absorption measurement of optical thin films under high power density with a Closed Cavity[J]. Chinese Optics Letters, 2015, 13(3): 033101 Copy Citation Text

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Fig. 1. Diagram of Closed Cavity platform.

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Fig. 2. Physical picture of the Closed Cavity platform.

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Fig. 3. Diagram of the output power curve.

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Fig. 4. Diagram of the ablation spot of the output laser X axis is the direction of flow.

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Lenses	$M_{1}$	$M_{2}$	$M_{3}$	$M_{4}$
Size (mm)	$Φ 50$	$Φ 50$	$Φ 50$	$Φ 50$
Substrate	monocrystalline silicon	monocrystalline silicon	monocrystalline silicon	monocrystalline silicon
Optical thin film	multilayer dielectric film	multilayer dielectric film	multilayer dielectric film	multilayer dielectric film
Specific heat ratio ( $J / (g \times K)$ )	0.71	0.71	0.71	0.71
Reflectance	$\sim 99.9 %$	$\sim 99.9 %$	$\sim 99.9 %$	$\sim 99.9 %$
Mass (g)	18.059	13.384	18.174	18.178
Running time (s)	100	100	100	100
Equilibrium temperature rise (K)	4.79	10.16	5.08	4.01
Absorption coefficient (ppm)	95.1	149.6	101.6	80.2