• Laser & Optoelectronics Progress
  • Vol. 57, Issue 1, 011409 (2020)
Xiaohong Ge1、2, Ruiying Zhang2、*, Chunyang Guo2, Annan Li2, and Shuaida Wang2
Author Affiliations
  • 1Nano Science and Technology Institute, University of Science and Technology of China, Suzhou, Jiangsu 215123, China
  • 2Lightweight Laboratory of Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
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    DOI: 10.3788/LOP57.011409 Cite this Article Set citation alerts
    Xiaohong Ge, Ruiying Zhang, Chunyang Guo, Annan Li, Shuaida Wang. Multiple Factor Ion Implantation-Induced Quantum Well Intermixing Effect[J]. Laser & Optoelectronics Progress, 2020, 57(1): 011409 Copy Citation Text show less
    References

    [1] Huang H, Ren X M, Lü J H et al. Monolithically integrated Si-based wavelength-selective photodetector operating at long wavelength[J]. Chinese Journal of Lasers, 36, 356-359(2009).

    [2] Chen B. Monolithic integration technology based on selective epitaxy growth[D]. Wuhan: Huazhong University of Science and Technology(2014).

    [3] Zhang D H, Sun L, Yoon S F. Doping effect on the intermixing in GaInAsP/InP multiple quantum well structures grown using all solid sources[J]. Journal of Crystal Growth, 268, 401-405(2004).

    [4] Dhamodaran S, Devaraju G, Pathak A P et al. Ion beam modification studies of InP based multi quantum wells[J]. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions With Materials and Atoms, 266, 1810-1815(2008).

    [5] Lin T, Zheng K, Ma X Y. AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion[J]. Acta Optica Sinica, 28, 2209-2214(2008).

    [6] Lin T, Sun H, Zhang H Q et al. Present status of impurity free vacancy disordering research and application[J]. Laser & Optoelectronics Progress, 52, 030003(2015).

    [7] Genest J, Dubowski J J, Aimez V. Suppressed intermixing in InAlGaAs/AlGaAs/GaAs and AlGaAs/GaAs quantum well heterostructures irradiated with a KrF excimer laser[J]. Applied Physics A, 89, 423-426(2007).

    [8] Nie D, Mei T, Djie H S et al. Analysis of inductively coupled argon plasma-enhanced quantum-well intermixing process for multiple bandgap implementation[J]. Journal of Crystal Growth, 288, 32-35(2006).

    [9] Liu C, Li G H, Han D J et al. Band-gap blue shift by ion implantation in InGaAs/InGaAsP quantum-well laser-structure[J]. Journal of Beijing Normal University(Natural Science), 37, 170-173(2001).

    [10] Chen J, Zhao J, Wang Y C et al. InGaAsP/InP double quantum well intermixing induced by phosphorus ion implantation[J]. Semiconductor Photonics and Technology, 11, 217-220(2005).

    [11] Parker J S, Sivananthan A, Norberg E et al. Regrowth-free high-gain InGaAsP/InP active-passive platform via ion implantation[J]. Optics Express, 20, 19946-19955(2012).

    [12] Younis U, Holmes B M, Hutchings D C. Characterization and optimization of ion implantation for high spatial resolution quantum well intermixing in GaAs/AlGaAs superlattices[J]. The European Physical Journal Applied Physics, 66, 10101(2014).

    [13] Lin T, Zhang H Q, Guo E M et al. Study of N ions implantation induced quantum well intermixing in GaInP/AlGaInP quantum well structures[J]. Journal of Alloys and Compounds, 650, 336-341(2015).

    [14] Lin T, Ning S H, Li J J et al. Temperature-dependent photoluminescence characteristics of strained GaInP quantum well structure[J]. Acta Photonica Sinica, 48, 0125001(2019).

    Xiaohong Ge, Ruiying Zhang, Chunyang Guo, Annan Li, Shuaida Wang. Multiple Factor Ion Implantation-Induced Quantum Well Intermixing Effect[J]. Laser & Optoelectronics Progress, 2020, 57(1): 011409
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