Xiaohong Ge, Ruiying Zhang, Chunyang Guo, Annan Li, Shuaida Wang. Multiple Factor Ion Implantation-Induced Quantum Well Intermixing Effect[J]. Laser & Optoelectronics Progress, 2020, 57(1): 011409
- Laser & Optoelectronics Progress
- Vol. 57, Issue 1, 011409 (2020)
Fig. 1. Distributions of P+ implantation depth under different implantation energies. (a) Samples of group A; (b) samples of group B
Fig. 2. Section views of epitaxial material. (a) Epitaxial wafer structure without etch, samples of group A; (b) epitaxial wafer structure for etching InGaAs contact layer and 600 nm InP cladding layer, samples of group B
Fig. 3. Process flow charts of two groups of samples. (a) Group A; (b) group B
Fig. 4. Blue-shift wavelength of sample A as a function of annealing temperature under different implantation energies
Fig. 5. Variation in blue-shift of wavelength at different annealing temperatures and time
Fig. 6. PL intensity of sample A as a function of annealing temperature under different implantation energies
Fig. 7. Variation in PL intensity of sample A at different annealing temperatures and time
Fig. 8. FWHM of sample A as a function of annealing temperature under different implantation energies
Fig. 9. Comparison of PL spectra between samples A and B
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