Multiple Factor Ion Implantation-Induced Quantum Well Intermixing Effect

Xiaohong Ge; Ruiying Zhang; Chunyang Guo; Annan Li; Shuaida Wang

doi:10.3788/LOP57.011409

Journals >Laser & Optoelectronics Progress >Volume 57 >Issue 1 >Page 011409 > Article

Laser & Optoelectronics Progress
Vol. 57, Issue 1, 011409 (2020)

Multiple Factor Ion Implantation-Induced Quantum Well Intermixing Effect

Xiaohong Ge^1、2, Ruiying Zhang^2、*, Chunyang Guo², Annan Li², and Shuaida Wang²

Author Affiliations

¹Nano Science and Technology Institute, University of Science and Technology of China, Suzhou, Jiangsu 215123, China

²Lightweight Laboratory of Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China

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DOI: 10.3788/LOP57.011409 Cite this Article Set citation alerts

Xiaohong Ge, Ruiying Zhang, Chunyang Guo, Annan Li, Shuaida Wang. Multiple Factor Ion Implantation-Induced Quantum Well Intermixing Effect[J]. Laser & Optoelectronics Progress, 2020, 57(1): 011409 Copy Citation Text

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Xiaohong Ge, Ruiying Zhang, Chunyang Guo, Annan Li, Shuaida Wang. Multiple Factor Ion Implantation-Induced Quantum Well Intermixing Effect[J]. Laser & Optoelectronics Progress, 2020, 57(1): 011409

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