Quantum light source devices of In(Ga)As semiconductorself-assembled quantum dots

Xiaowu He; Yifeng Song; Ying Yu; Ben Ma; Zesheng Chen; Xiangjun Shang; Haiqiao Ni; Baoquan Sun; Xiuming Dou; Hao Chen; Hongyue Hao; Tongtong Qi; Shushan Huang; Hanqing Liu; Xiangbin Su; Xinliang Su; Yujun Shi; Zhichuan Niu

doi:10.1088/1674-4926/40/7/071902

Journals >Journal of Semiconductors >Volume 40 >Issue 7 >Page 071902 > Article

Journal of Semiconductors
Vol. 40, Issue 7, 071902 (2019)

Quantum light source devices of In(Ga)As semiconductorself-assembled quantum dots

Xiaowu He¹, Yifeng Song², Ying Yu³, Ben Ma¹, Zesheng Chen¹, Xiangjun Shang¹, Haiqiao Ni¹, Baoquan Sun¹, Xiuming Dou¹, Hao Chen¹, Hongyue Hao¹, Tongtong Qi¹, Shushan Huang¹, Hanqing Liu¹, Xiangbin Su¹, Xinliang Su⁴, Yujun Shi⁴, and Zhichuan Niu^1、5、6

Author Affiliations

¹State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China

²School of Engineering, University of Glasgow, Glasgow G12 8LT, UK

³State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China

⁴Laboratory of Solid Quantum Material Center, College of Physics and Electronic Engineering, Shanxi University, Taiyuan 030006, China

⁵Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

⁶Beijing Academy of Quantum Information Sciences, Beijing 100193, China

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DOI: 10.1088/1674-4926/40/7/071902 Cite this Article

Xiaowu He, Yifeng Song, Ying Yu, Ben Ma, Zesheng Chen, Xiangjun Shang, Haiqiao Ni, Baoquan Sun, Xiuming Dou, Hao Chen, Hongyue Hao, Tongtong Qi, Shushan Huang, Hanqing Liu, Xiangbin Su, Xinliang Su, Yujun Shi, Zhichuan Niu. Quantum light source devices of In(Ga)As semiconductorself-assembled quantum dots[J]. Journal of Semiconductors, 2019, 40(7): 071902 Copy Citation Text

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Fig. 1. (Color online) Single photons emitted from quantum 2-level transition and HBT coincidence counting test.

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Fig. 2. (Color online) Schematic diagram of (a) inward total reflective angle and (b) the interaction between atom and microcavity^[75].

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Fig. 3. (Color online) Strain-coupled InAs/GaAs single QDs emit at 1.3 μm^{[56, 76]}.

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Fig. 4. (Color online) Forward and reversed tapered micropillars with smooth facet^[56].

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Fig. 5. (Color online) Test of 1.3 μm micropillar coupled QD SPSs^[56].

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Fig. 6. (Color online) InAs (a), GaAs (b) QDs on droplet self-catalyzed NWs and their exciton emission^{[39, 59]}.

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Fig. 7. (Color online) Direct fiber extracted AlGaAs/GaAs QD SPSs^[60].

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Fig. 8. (Color online) Direct fiber extracted InAs/GaAs QD SPSs^[57].

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Fig. 9. (Color online) QD RF and single-photon quantum memory.

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Material system		T_max (K)	λ(nm)	Comment	Ref.
I	InGaAs/InAs/GaAs	90	~1300	~1.1–8.6	Biexponential decay	[68, 69]
I	InAs/GaAs	50	~850–1000	~1		[70]
II	InAs/InP	50–70	~1550	~1–2		[71, 72]
	InP/InGaP	50	~650–750	~1		[73–76]
	InP/AlGaInP	80	~650–750	~0.5–1		[70]
III	InGaN/GaN	150	~430	~8–60		[69–79]
III	GaN/AlN	~0.1–1000	~250–500	200	Lifetime increases with wavelength	[80–82]

Table 1. Comparison of different III-V epitaxially grown QD material systems and their properties^[67].

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