• Journal of Semiconductors
  • Vol. 40, Issue 7, 071902 (2019)
Xiaowu He1, Yifeng Song2, Ying Yu3, Ben Ma1, Zesheng Chen1, Xiangjun Shang1, Haiqiao Ni1, Baoquan Sun1, Xiuming Dou1, Hao Chen1, Hongyue Hao1, Tongtong Qi1, Shushan Huang1, Hanqing Liu1, Xiangbin Su1, Xinliang Su4, Yujun Shi4, and Zhichuan Niu1、5、6
Author Affiliations
  • 1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China
  • 2School of Engineering, University of Glasgow, Glasgow G12 8LT, UK
  • 3State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
  • 4Laboratory of Solid Quantum Material Center, College of Physics and Electronic Engineering, Shanxi University, Taiyuan 030006, China
  • 5Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 6Beijing Academy of Quantum Information Sciences, Beijing 100193, China
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    DOI: 10.1088/1674-4926/40/7/071902 Cite this Article
    Xiaowu He, Yifeng Song, Ying Yu, Ben Ma, Zesheng Chen, Xiangjun Shang, Haiqiao Ni, Baoquan Sun, Xiuming Dou, Hao Chen, Hongyue Hao, Tongtong Qi, Shushan Huang, Hanqing Liu, Xiangbin Su, Xinliang Su, Yujun Shi, Zhichuan Niu. Quantum light source devices of In(Ga)As semiconductorself-assembled quantum dots[J]. Journal of Semiconductors, 2019, 40(7): 071902 Copy Citation Text show less

    Abstract

    A brief introduction of semiconductor self-assembled quantum dots (QDs) applied in single-photon sources is given. Single QDs in confined quantum optical microcavity systems are reviewed along with their optical properties and coupling characteristics. Subsequently, the recent progresses in In(Ga)As QDs systems are summarized including the preparation of quantum light sources, multiple methods for embedding single QDs into different microcavities and the scalability of single-photon emitting wavelength. Particularly, several In(Ga)As QD single-photon devices are surveyed including In(Ga)As QDs coupling with nanowires, InAs QDs coupling with distributed Bragg reflection microcavity and the In(Ga)As QDs coupling with micropillar microcavities. Furthermore, applications in the field of single QDs technology are illustrated, such as the entangled photon emission by spontaneous parametric down conversion, the single-photon quantum storage, the chip preparation of single-photon sources as well as the single-photon resonance-fluorescence measurements.
    $ {F_{\rm p}} = \frac{3}{{4{\pi ^2}}}{\left( {\frac{{{\lambda _{\rm c}}}}{n}} \right)^3}\frac{Q}{{{V_{od\!\!{\rm e}}}}}, $ (3)

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    $ \varOmega = 2\pi \left( {1 - \cos \theta } \right) = 2\pi \left[ {1 - \left( {1 - 1/2{n^2}} \right)} \right] = \pi /{n^2}, $ (1)

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    $ \eta = \varOmega /4\pi = 1/4{n^2}. $ (2)

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    Xiaowu He, Yifeng Song, Ying Yu, Ben Ma, Zesheng Chen, Xiangjun Shang, Haiqiao Ni, Baoquan Sun, Xiuming Dou, Hao Chen, Hongyue Hao, Tongtong Qi, Shushan Huang, Hanqing Liu, Xiangbin Su, Xinliang Su, Yujun Shi, Zhichuan Niu. Quantum light source devices of In(Ga)As semiconductorself-assembled quantum dots[J]. Journal of Semiconductors, 2019, 40(7): 071902
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