• Chinese Optics Letters
  • Vol. 7, Issue 4, 286 (2009)
Sungbong Park, Shinya Takita, Yasuhiko Ishikawa, Jiro Osaka, and Kazumi Wada
Author Affiliations
  • Department of Materials Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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    DOI: 10.3788/COL20090704.0286 Cite this Article Set citation alerts
    Sungbong Park, Shinya Takita, Yasuhiko Ishikawa, Jiro Osaka, Kazumi Wada. Reverse current reduction of Ge photodiodes on Si without post-growth annealing[J]. Chinese Optics Letters, 2009, 7(4): 286 Copy Citation Text show less
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    Data from CrossRef

    [1] Li-qun Chen, Xiang-ying Huang, Min Li, Yan-hua Huang, Yue-yun Wang, Guang-ming Yan, Cheng Li. High-performance Ge p-i-n photodetector on Si substrate. Optoelectronics Letters, 11, 195(2015).

    [2] Weixuan Hu, Buwen Cheng, Chunlai Xue, Shaojian Su, Haiyun Xue, Yuhua Zuo, Qiming Wang. Ge-on-Si for Si-based integrated materials and photonic devices. Frontiers of Optoelectronics, 5, 41(2012).

    [3] Quan-Bao Ma, Ruben Lieten, Maarten Leys, Stefan Degroote, Marianne Germain, Gustaaf Borghs. Solid phase epitaxy of amorphous Ge films deposited by PECVD. Journal of Crystal Growth, 331, 40(2011).

    [4] Kazumi Wada. Recent Advances in Germanium Based Devices. Advanced Photonics Congress, IM3A.1(2012).

    [5] R. Kuroyanagi, L.M. Nguyen, T. Tsuchizawa, Y. Ishikawa, K. Yamada, K. Wada. Local bandgap control of germanium by silicon nitride stressor. Optics Express, 21, 18553(2013).

    Sungbong Park, Shinya Takita, Yasuhiko Ishikawa, Jiro Osaka, Kazumi Wada. Reverse current reduction of Ge photodiodes on Si without post-growth annealing[J]. Chinese Optics Letters, 2009, 7(4): 286
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