Reverse current reduction of Ge photodiodes on Si without post-growth annealing

Sungbong Park; Shinya Takita; Yasuhiko Ishikawa; Jiro Osaka; Kazumi Wada

doi:10.3788/COL20090704.0286

Journals >Chinese Optics Letters >Volume 7 >Issue 4 >Page 286 > Article

Chinese Optics Letters
Vol. 7, Issue 4, 286 (2009)

Reverse current reduction of Ge photodiodes on Si without post-growth annealing

Sungbong Park, Shinya Takita, Yasuhiko Ishikawa, Jiro Osaka, and Kazumi Wada

Author Affiliations

Department of Materials Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

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DOI: 10.3788/COL20090704.0286 Cite this Article Set citation alerts

Sungbong Park, Shinya Takita, Yasuhiko Ishikawa, Jiro Osaka, Kazumi Wada. Reverse current reduction of Ge photodiodes on Si without post-growth annealing[J]. Chinese Optics Letters, 2009, 7(4): 286 Copy Citation Text

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Sungbong Park, Shinya Takita, Yasuhiko Ishikawa, Jiro Osaka, Kazumi Wada. Reverse current reduction of Ge photodiodes on Si without post-growth annealing[J]. Chinese Optics Letters, 2009, 7(4): 286

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