• Infrared and Laser Engineering
  • Vol. 50, Issue 8, 20210357 (2021)
Jinhui Wu1, Xiulan Ling2, Ji Liu1、2, and Xin Chen2
Author Affiliations
  • 1Ministry of Education and Key Laboratory of Science and Technology on Electronic Test & Measurement, Key Laboratory of Instrumentation Science & Dynamic Measurement,North University of China, Taiyuan 030051, China
  • 2School of Information and Communication Engineering, North University of China, Taiyuan 030051, China
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    DOI: 10.3788/IRLA20210357 Cite this Article
    Jinhui Wu, Xiulan Ling, Ji Liu, Xin Chen. Analyses of light field enhancement damage induced by defects in optical thin films[J]. Infrared and Laser Engineering, 2021, 50(8): 20210357 Copy Citation Text show less
    Schematic diagram of single-layer SiO2 film containing defects irradiated by laser
    Fig. 1. Schematic diagram of single-layer SiO2 film containing defects irradiated by laser
    Light field distribution of SiO2 film induced by defect
    Fig. 2. Light field distribution of SiO2 film induced by defect
    Light field distribution of SiO2 film induced by defect with different refractive index
    Fig. 3. Light field distribution of SiO2 film induced by defect with different refractive index
    Dependence of peak light field on the refractive index of defect
    Fig. 4. Dependence of peak light field on the refractive index of defect
    Light field distribution of films induced by defect with different depths
    Fig. 5. Light field distribution of films induced by defect with different depths
    Light field distribution of films induced by defect with different sizes
    Fig. 6. Light field distribution of films induced by defect with different sizes
    Light field distribution under laser wavelength of 355 nm (a), 532 nm (b), 1 064 nm (c)
    Fig. 7. Light field distribution under laser wavelength of 355 nm (a), 532 nm (b), 1 064 nm (c)
    Jinhui Wu, Xiulan Ling, Ji Liu, Xin Chen. Analyses of light field enhancement damage induced by defects in optical thin films[J]. Infrared and Laser Engineering, 2021, 50(8): 20210357
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