Norman Susilo, Eviathar Ziffer, Sylvia Hagedorn, Leonardo Cancellara, Carsten Netzel, Neysha Lobo Ploch, Shaojun Wu, Jens Rass, Sebastian Walde, Luca Sulmoni, Martin Guttmann, Tim Wernicke, Martin Albrecht, Markus Weyers, Michael Kneissl. Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire[J]. Photonics Research, 2020, 8(4): 589
- Photonics Research
- Vol. 8, Issue 4, 589 (2020)
Fig. 1. AFM images of the MQW samples on (a) planar, (b) HTA planar, (c) ELO, and (d) HTA ELO templates.
Fig. 2. Panchromatic CL topograms at 80 K of the MQW samples on (a) planar, (b) HTA planar, (c) ELO, and (d) HTA ELO templates.
Fig. 3. Cross-sectional TEM images of the MQW samples on (a) and (b) HTA planar, (c) and (d) ELO, and (e) and (f) HTA ELO templates under different diffraction contrast conditions (g →
Fig. 4. (a) LIV characteristics of the UVC-LEDs on different templates, measured on-wafer, in bottom emission configuration under cw operation. (b) TDD determined by HRXRD and cross-sectional TEM and DSD determined by CL topograms. The IQE was estimated by SiLENSe simulations using the model of Karpov et al. [26] and from the EL results at j = 13 A / cm 2
Fig. 5. Integrating sphere measurements of the output power of UVC-LED chips encapsulated with a UV-transparent polymer on ELO (red) and HTA ELO (black) templates under cw operation. Inset shows the EL spectrum on HTA ELO template at 20 mA.
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