Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire

Norman Susilo; Eviathar Ziffer; Sylvia Hagedorn; Leonardo Cancellara; Carsten Netzel; Neysha Lobo Ploch; Shaojun Wu; Jens Rass; Sebastian Walde; Luca Sulmoni; Martin Guttmann; Tim Wernicke; Martin Albrecht; Markus Weyers; Michael Kneissl

doi:10.1364/PRJ.385275

Journals >Photonics Research >Volume 8 >Issue 4 >Page 589 > Article

Photonics Research
Vol. 8, Issue 4, 589 (2020)

Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire

Norman Susilo^1、*, Eviathar Ziffer¹, Sylvia Hagedorn², Leonardo Cancellara³, Carsten Netzel², Neysha Lobo Ploch², Shaojun Wu¹, Jens Rass², Sebastian Walde², Luca Sulmoni¹, Martin Guttmann¹, Tim Wernicke¹, Martin Albrecht³, Markus Weyers², and Michael Kneissl^1、2

Author Affiliations

¹Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany

²Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany

³Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany

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DOI: 10.1364/PRJ.385275 Cite this Article Set citation alerts

Norman Susilo, Eviathar Ziffer, Sylvia Hagedorn, Leonardo Cancellara, Carsten Netzel, Neysha Lobo Ploch, Shaojun Wu, Jens Rass, Sebastian Walde, Luca Sulmoni, Martin Guttmann, Tim Wernicke, Martin Albrecht, Markus Weyers, Michael Kneissl. Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire[J]. Photonics Research, 2020, 8(4): 589 Copy Citation Text

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