• Laser & Optoelectronics Progress
  • Vol. 59, Issue 5, 0523003 (2022)
Jing Zhang1, Wenrui Xue1、*, Chen Zhang1, Yuting Chen1, and Changyong Li2、3
Author Affiliations
  • 1College of Physics and Electronic Engineering, Shanxi University, Taiyuan , Shanxi 030006, China
  • 2Key Laboratory of Quantum Optics and Photonic Devices, Institute of Laser Spectroscopy, Shanxi University, Taiyuan , Shanxi 030006, China
  • 3Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan , Shanxi 030006, China
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    DOI: 10.3788/LOP202259.0523003 Cite this Article Set citation alerts
    Jing Zhang, Wenrui Xue, Chen Zhang, Yuting Chen, Changyong Li. Grating-Type Ultraviolet Absorber Based on Bi1.5Sb0.5Te1.8Se1.2 Materials[J]. Laser & Optoelectronics Progress, 2022, 59(5): 0523003 Copy Citation Text show less
    Schematic diagram of the unit structure of the grating-type ultraviolet absorber based on BSTS material
    Fig. 1. Schematic diagram of the unit structure of the grating-type ultraviolet absorber based on BSTS material
    Relationship between the dielectric constant of the BSTS material and the wavelength
    Fig. 2. Relationship between the dielectric constant of the BSTS material and the wavelength
    Relationship between the dielectric constant of the SiO2 material and the wavelength
    Fig. 3. Relationship between the dielectric constant of the SiO2 material and the wavelength
    Under optimized parameter conditions, contour plot of absorbance as a function of incident angle and wavelength
    Fig. 4. Under optimized parameter conditions, contour plot of absorbance as a function of incident angle and wavelength
    Under optimized parameter conditions, relationship between absorptivity, reflectivity and transmittance as a function of wavelength at 60° incidence
    Fig. 5. Under optimized parameter conditions, relationship between absorptivity, reflectivity and transmittance as a function of wavelength at 60° incidence
    Normalized magnetic field distribution with wavelength of (a) 260 nm, (b) 300 nm and (c) 360 nm in the case of 60° incidence
    Fig. 6. Normalized magnetic field distribution with wavelength of (a) 260 nm, (b) 300 nm and (c) 360 nm in the case of 60° incidence
    In the case of 60° incidence, the absorption rate versus the wavelength when the number of layers of the composite layer L is 6, 10 and 14, respectively, while keeping other optimized parameters unchanged. The embedded graphs are the normalized magnetic field distribution when the wavelength is 350 nm.
    Fig. 7. In the case of 60° incidence, the absorption rate versus the wavelength when the number of layers of the composite layer L is 6, 10 and 14, respectively, while keeping other optimized parameters unchanged. The embedded graphs are the normalized magnetic field distribution when the wavelength is 350 nm.
    In the case of 60° incidence, the absorption rate versus the wavelength when the BSTS height h1 is 25 nm, 40 nm and 55 nm respectively, while keeping other optimized parameters unchanged. The embedded graphs are the normalized magnetic field distribution when the wavelength is 380 nm.
    Fig. 8. In the case of 60° incidence, the absorption rate versus the wavelength when the BSTS height h1 is 25 nm, 40 nm and 55 nm respectively, while keeping other optimized parameters unchanged. The embedded graphs are the normalized magnetic field distribution when the wavelength is 380 nm.
    In the case of 60° incidence, the absorption rate versus the wavelength when the height of SiO2h2 is 10 nm, 15 nm and 25 nm respectively, while keeping other optimized parameters unchanged. The embedded graphs are the normalized magnetic field distribution when the wavelength is 368 nm.
    Fig. 9. In the case of 60° incidence, the absorption rate versus the wavelength when the height of SiO2h2 is 10 nm, 15 nm and 25 nm respectively, while keeping other optimized parameters unchanged. The embedded graphs are the normalized magnetic field distribution when the wavelength is 368 nm.
    In the case of 60° incidence, the absorption rate versus the wavelength when the width W1 is 35 nm, 45 nm and 75 nm respectively, while keeping other optimized parameters unchanged. The embedded graphs are the normalized magnetic field distribution when the wavelength is 280 nm.
    Fig. 10. In the case of 60° incidence, the absorption rate versus the wavelength when the width W1 is 35 nm, 45 nm and 75 nm respectively, while keeping other optimized parameters unchanged. The embedded graphs are the normalized magnetic field distribution when the wavelength is 280 nm.
    In the case of 60°incidence, the absorption rate versus the wavelength when the width W2 is 80 nm, 90 nm and 100 nm respectively, while keeping other optimized parameters unchanged. The embedded graphs are the normalized magnetic field distribution when the wavelength is 368 nm.
    Fig. 11. In the case of 60°incidence, the absorption rate versus the wavelength when the width W2 is 80 nm, 90 nm and 100 nm respectively, while keeping other optimized parameters unchanged. The embedded graphs are the normalized magnetic field distribution when the wavelength is 368 nm.
    In the case of 60° incidence, the absorption rate versus the wavelength when the period P is 105 nm, 115 nm and 125 nm respectively, while keeping other optimized parameters unchanged. The embedded graphs are the normalized magnetic field distribution when the wavelength is 394 nm.
    Fig. 12. In the case of 60° incidence, the absorption rate versus the wavelength when the period P is 105 nm, 115 nm and 125 nm respectively, while keeping other optimized parameters unchanged. The embedded graphs are the normalized magnetic field distribution when the wavelength is 394 nm.
    kGkωk /eVΓk /eV
    01940.970.1620.333
    14.7061.5440.312
    211.391.8081.351
    30.5583.4733.382
    Table 1. Table of model parameters for dielectric constant of aluminum metals
    Parameterh1h2W1W2PdL
    Value40 nm10 nm45 nm100 nm105 nm110 nm10
    Table 2. Optimized parameters
    Jing Zhang, Wenrui Xue, Chen Zhang, Yuting Chen, Changyong Li. Grating-Type Ultraviolet Absorber Based on Bi1.5Sb0.5Te1.8Se1.2 Materials[J]. Laser & Optoelectronics Progress, 2022, 59(5): 0523003
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