Fig. 1. (a) [110]-pole TEM pattern of fully disordered lightly Te-doped Ga0.74In0.26P sample with n=7×1016  cm−3. (b) SEM image of the etch pits of Ga0.74In0.26P film, and EPD=(3±0.5)×106  cm−2.

Fig. 2. Temperature-dependent normalized PL spectra (6–300 K) of Te-doped Ga0.74In0.26P samples with (a) n=7×1016  cm−3, (b) n=9×1017  cm−3, and (c) n=2×1018  cm−3. The positions of NPx, LAx, and DAP emission peaks from Ref. [3] are labeled, and their positions are indicated by dashed black lines. Solid red lines and arrows indicate the positions of direct band emission, shifting with increasing temperature.

Fig. 3. Peak positions of Te-doped Ga0.74In0.26P samples versus temperature. The data points marked with green stars are from Ref. [3]. Dashed lines are fitted to derive the thermal coefficients of the Γ band.

Fig. 4. Temperature-dependent PL spectra (175–300 K) of Te-doped Ga0.74In0.26P samples with (a) S01, n=7×1016  cm−3, (b) S02, n=9×1017  cm−3, and (c) S03, n=2×1018  cm−3.

Fig. 5. Arrhenius plot of integrated PL intensity versus temperature for Te-doped Ga0.74In0.26P samples with n=9×1017  cm−3 (red dots) and n=2×1018  cm−3 (blue diamonds). The activation energies, Ea, were derived from the fitted dashed lines.

Fig. 6. Integrated PL intensity (black squares) of Te-doped Ga0.74In0.26P samples and their corresponding peak emission energy (blue circles) versus doping concentration at room temperature. Curve fitting (blue solid line) shows an approximate linear regression of emission energy with increasing doping concentration due to BGN effect.

Fig. 7. (a) XTEM image of Te-doped Ga0.74In0.26P sample at n=5×1018  cm−3. (b) Scanning XTEM image at high resolution.