Direct bandgap photoluminescence from n-type indirect GaInP alloys

Cong Wang; Bing Wang; Riko I. Made; Soon-Fatt Yoon; Jurgen Michel

doi:10.1364/PRJ.5.000239

Journals >Photonics Research >Volume 5 >Issue 3 >Page 239 > Article

Photonics Research
Vol. 5, Issue 3, 239 (2017)

Direct bandgap photoluminescence from n-type indirect GaInP alloys

Cong Wang^1、2, Bing Wang², Riko I. Made², Soon-Fatt Yoon^1、2, and Jurgen Michel^2、3、*

Author Affiliations

¹School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore

²Low Energy Electronic Systems, Singapore-MIT Alliance for Research and Technology, Singapore 138602, Singapore

³Department of Materials Science and Engineering, Massachusetts Institute of Technology, Massachusetts 02139, USA

show less

DOI: 10.1364/PRJ.5.000239 Cite this Article Set citation alerts

Cong Wang, Bing Wang, Riko I. Made, Soon-Fatt Yoon, Jurgen Michel. Direct bandgap photoluminescence from n-type indirect GaInP alloys[J]. Photonics Research, 2017, 5(3): 239 Copy Citation Text

EndNote(RIS)

BibTex

Plain Text

show less

Cited By

Article index updated: Aug. 18, 2023

Citation counts are provided from Web of Science. The counts may vary by service, and are reliant on the availability of their data.

The article is cited by 6 article(s) from Web of Science.

Cong Wang, Bing Wang, Riko I. Made, Soon-Fatt Yoon, Jurgen Michel. Direct bandgap photoluminescence from n-type indirect GaInP alloys[J]. Photonics Research, 2017, 5(3): 239

Download Citation

EndNote(RIS)

BibTex

Plain Text

Set citation alerts for the article

Tools

Set citation alerts for the article

Save the article for my favorites

Paper Information