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Journals >Photonics Research >Volume 5 >Issue 3 >Page 239 > Article

Photonics Research
Vol. 5, Issue 3, 239 (2017)

Direct bandgap photoluminescence from n-type indirect GaInP alloys

Cong Wang^1、2, Bing Wang², Riko I. Made², Soon-Fatt Yoon^1、2, and Jurgen Michel^2、3、*

Author Affiliations

¹School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore

²Low Energy Electronic Systems, Singapore-MIT Alliance for Research and Technology, Singapore 138602, Singapore

³Department of Materials Science and Engineering, Massachusetts Institute of Technology, Massachusetts 02139, USA

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DOI: 10.1364/PRJ.5.000239 Cite this Article Set citation alerts

Cong Wang, Bing Wang, Riko I. Made, Soon-Fatt Yoon, Jurgen Michel. Direct bandgap photoluminescence from n-type indirect GaInP alloys[J]. Photonics Research, 2017, 5(3): 239 Copy Citation Text

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References

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Cong Wang, Bing Wang, Riko I. Made, Soon-Fatt Yoon, Jurgen Michel. Direct bandgap photoluminescence from n-type indirect GaInP alloys[J]. Photonics Research, 2017, 5(3): 239

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