• Chinese Optics Letters
  • Vol. 13, Issue 8, 081301 (2015)
良顺 韩, 松 梁*, 洪亮 朱, and 圩 王
Author Affiliations
  • Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China
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    DOI: 10.3788/COL201513.081301 Cite this Article Set citation alerts
    良顺 韩, 松 梁, 洪亮 朱, 圩 王. Fabrication of an electro-absorption modulated distributed feedback laser by quantum well intermixing with etching ion-implantation buffer layer[J]. Chinese Optics Letters, 2015, 13(8): 081301 Copy Citation Text show less
    (a) Epitaxial structure for QWI process; (b) final regrowth structure.
    Fig. 1. (a) Epitaxial structure for QWI process; (b) final regrowth structure.
    Schematic diagram of P+ implantation QWI with etching implantation buffer layer. From left to right, P+ implantation, etch implantation buffer layer, and RTA process.
    Fig. 2. Schematic diagram of P+ implantation QWI with etching implantation buffer layer. From left to right, P+ implantation, etch implantation buffer layer, and RTA process.
    PL peak shift as a function of anneal time of different samples.
    Fig. 3. PL peak shift as a function of anneal time of different samples.
    PL spectrum of laser and modulator regions.
    Fig. 4. PL spectrum of laser and modulator regions.
    Optical microscope image of the fabricated device with section indications.
    Fig. 5. Optical microscope image of the fabricated device with section indications.
    L–I curves of as-grown FP laser, implanted FP laser, and EML without bias. Inset, optical spectrum of the device.
    Fig. 6. LI curves of as-grown FP laser, implanted FP laser, and EML without bias. Inset, optical spectrum of the device.
    Static ER and extinction efficiency as functions of bias voltage.
    Fig. 7. Static ER and extinction efficiency as functions of bias voltage.
    Electrical-to-optical response of the fabricated EA modulator.
    Fig. 8. Electrical-to-optical response of the fabricated EA modulator.
    良顺 韩, 松 梁, 洪亮 朱, 圩 王. Fabrication of an electro-absorption modulated distributed feedback laser by quantum well intermixing with etching ion-implantation buffer layer[J]. Chinese Optics Letters, 2015, 13(8): 081301
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