Fabrication of an electro-absorption modulated distributed feedback laser by quantum well intermixing with etching ion-implantation buffer layer

良顺 韩; 松 梁; 洪亮 朱; 圩 王

doi:10.3788/COL201513.081301

Journals >Chinese Optics Letters >Volume 13 >Issue 8 >Page 081301 > Article

Chinese Optics Letters
Vol. 13, Issue 8, 081301 (2015)

Fabrication of an electro-absorption modulated distributed feedback laser by quantum well intermixing with etching ion-implantation buffer layer

良顺韩, 松梁^*, 洪亮朱, and 圩王

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Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China

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DOI: 10.3788/COL201513.081301 Cite this Article Set citation alerts

良顺韩, 松梁, 洪亮朱, 圩王. Fabrication of an electro-absorption modulated distributed feedback laser by quantum well intermixing with etching ion-implantation buffer layer[J]. Chinese Optics Letters, 2015, 13(8): 081301 Copy Citation Text

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