• Advanced Photonics
  • Vol. 5, Issue 4, 046004 (2023)
Maoliang Wei1、†, Junying Li1, Zequn Chen2、3, Bo Tang4, Zhiqi Jia1, Peng Zhang4, Kunhao Lei1, Kai Xu1, Jianghong Wu2、3, Chuyu Zhong1, Hui Ma1, Yuting Ye2、3, Jialing Jian2、3, Chunlei Sun2、3, Ruonan Liu4, Ying Sun1, Wei. E. I. Sha1, Xiaoyong Hu5, Jianyi Yang1, Lan Li2、3, and Hongtao Lin1、*
Author Affiliations
  • 1Zhejiang University, College of Information Science and Electronic Engineering, State Key Laboratory of Modern Optical Instrumentation, Key Laboratory of Micro-Nano Electronics and Smart System of Zhejiang Province, Hangzhou, China
  • 2Westlake University, School of Engineering, Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, Hangzhou, China
  • 3Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, China
  • 4Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, China
  • 5Peking University, School of Physics, Frontiers Science Center for Nano-optoelectronics, State Key Laboratory for Mesoscopic Physics, Beijing, China
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    DOI: 10.1117/1.AP.5.4.046004 Cite this Article Set citation alerts
    Maoliang Wei, Junying Li, Zequn Chen, Bo Tang, Zhiqi Jia, Peng Zhang, Kunhao Lei, Kai Xu, Jianghong Wu, Chuyu Zhong, Hui Ma, Yuting Ye, Jialing Jian, Chunlei Sun, Ruonan Liu, Ying Sun, Wei. E. I. Sha, Xiaoyong Hu, Jianyi Yang, Lan Li, Hongtao Lin. Electrically programmable phase-change photonic memory for optical neural networks with nanoseconds in situ training capability[J]. Advanced Photonics, 2023, 5(4): 046004 Copy Citation Text show less

    Abstract

    Optical neural networks (ONNs), enabling low latency and high parallel data processing without electromagnetic interference, have become a viable player for fast and energy-efficient processing and calculation to meet the increasing demand for hash rate. Photonic memories employing nonvolatile phase-change materials could achieve zero static power consumption, low thermal cross talk, large-scale, and high-energy-efficient photonic neural networks. Nevertheless, the switching speed and dynamic energy consumption of phase-change material-based photonic memories make them inapplicable for in situ training. Here, by integrating a patch of phase change thin film with a PIN-diode-embedded microring resonator, a bifunctional photonic memory enabling both 5-bit storage and nanoseconds volatile modulation was demonstrated. For the first time, a concept is presented for electrically programmable phase-change material-driven photonic memory integrated with nanosecond modulation to allow fast in situ training and zero static power consumption data processing in ONNs. ONNs with an optical convolution kernel constructed by our photonic memory theoretically achieved an accuracy of predictions higher than 95% when tested by the MNIST handwritten digit database. This provides a feasible solution to constructing large-scale nonvolatile ONNs with high-speed in situ training capability.
    Supplementary Materials
    Maoliang Wei, Junying Li, Zequn Chen, Bo Tang, Zhiqi Jia, Peng Zhang, Kunhao Lei, Kai Xu, Jianghong Wu, Chuyu Zhong, Hui Ma, Yuting Ye, Jialing Jian, Chunlei Sun, Ruonan Liu, Ying Sun, Wei. E. I. Sha, Xiaoyong Hu, Jianyi Yang, Lan Li, Hongtao Lin. Electrically programmable phase-change photonic memory for optical neural networks with nanoseconds in situ training capability[J]. Advanced Photonics, 2023, 5(4): 046004
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