Researching | Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits

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Journal of Semiconductors
Vol. 43, Issue 12, 122801 (2022)

Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits

Guang Yang^1、2、3, Hao Luo^2、3, Jiajun Li^2、3, Qinqin Shao^2、3, Yazhe Wang^2、3, Ruzhong Zhu^2、3, Xi Zhang^2、3, Lihui Song^2、3, Yiqiang Zhang⁴, Lingbo Xu¹, Can Cui^1、*, Xiaodong Pi^2、3, Deren Yang^2、3、**, and Rong Wang^2、3、***

Author Affiliations

¹Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China

²State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

³Hangzhou Innovation Center, Zhejiang University, Hangzhou 311200, China

⁴School of Materials Science and Engineering & Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou 450001, China

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DOI: 10.1088/1674-4926/43/12/122801 Cite this Article

Guang Yang, Hao Luo, Jiajun Li, Qinqin Shao, Yazhe Wang, Ruzhong Zhu, Xi Zhang, Lihui Song, Yiqiang Zhang, Lingbo Xu, Can Cui, Xiaodong Pi, Deren Yang, Rong Wang. Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits[J]. Journal of Semiconductors, 2022, 43(12): 122801 Copy Citation Text

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References

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Guang Yang, Hao Luo, Jiajun Li, Qinqin Shao, Yazhe Wang, Ruzhong Zhu, Xi Zhang, Lihui Song, Yiqiang Zhang, Lingbo Xu, Can Cui, Xiaodong Pi, Deren Yang, Rong Wang. Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits[J]. Journal of Semiconductors, 2022, 43(12): 122801

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