Guang Yang, Hao Luo, Jiajun Li, Qinqin Shao, Yazhe Wang, Ruzhong Zhu, Xi Zhang, Lihui Song, Yiqiang Zhang, Lingbo Xu, Can Cui, Xiaodong Pi, Deren Yang, Rong Wang. Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits[J]. Journal of Semiconductors, 2022, 43(12): 122801
- Journal of Semiconductors
- Vol. 43, Issue 12, 122801 (2022)
Fig. 1. (Color online) Representative OM images of etched 4H-SiC samples. The doping profiles and etching durations are labelled in etch figure.
Fig. 2. (Color online) Representative OM images of molten-KOH etched 4H-SiC with the etching duration of 30 min. The doping of 4H-SiC and molten additives are labelled in the figure.
Fig. 3. (Color online) The LSCM images and depth profiles of (a) TSD, (b) TED, and (c) BPD.
Fig. 4. (Color online) The relationship between the sizes and inclination angles of the etch pits in (a) n-type SiC and (b) SI SiC.
Fig. 5. (Color online) The average (a) size and (b) inclination angle of etch pits of different dislocations as functions of the etching duration in both n-type and SI 4H-SiC.
Fig. 6. (Color online) (a) OM, (b) AFM, and (c) LSCM images of a representative TMD. (d) Depth profile of the TMD.
Fig. 7. (Color online) TEM images at (a)g = 0004 and (b)g =
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